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PDF MCP87030 Data sheet ( Hoja de datos )
| Número de pieza | MCP87030 | |
| Descripción | High-Speed N-Channel Power MOSFET | |
| Fabricantes | Microchip | |
| Logotipo |  |
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MCP87030
High-Speed N-Channel Power MOSFET
Features:
• Low Drain-to-Source On Resistance (RDS(ON))
• Low Total Gate Charge (QG) and Gate-to-Drain
Charge (QGD)
• Low Series Gate Resistance (RG)
• Fast Switching
• Capable of Short Dead-Time Operation
• RoHS Compliant
Applications:
• Point-of-Load DC-DC Converters
• High-Efficiency Power Management in Servers,
Networking and Automotive Applications
Package Type
PDFN 5 x 6
Description:
The MCP87030 is an N-Channel power MOSFET in a
popular PDFN 5 mm x 6 mm package. Advanced
packaging and silicon processing technologies allow
the MCP87030 to achieve a low QG for a given RDS(on)
value, resulting in a low Figure of Merit (FOM).
Combined with low RG, the low FOM of the MCP87030
allows high efficiency power conversion with reduced
switching and conduction losses.
S1
S2
S3
G4
8D
7D
6D
5D
Product Summary Table: Unless otherwise indicated, TA = +25°C
Parameters
Sym. Min. Typ. Max. Units
Conditions
Operating Characteristics
Drain-to-Source Breakdown Voltage
Gate-to-Source Threshold Voltage
Drain-to-Source On Resistance
Total Gate Charge
Gate-to-Drain Charge
Series Gate Resistance
BVDSS
VGS(TH)
RDS(ON)
QG
QGD
RG
25
1
—
—
—
—
—
——
V VGS = 0V, ID = 250 µA
1.3 1.6
V VDS = VGS, ID = 250 µA
3.3 4 mΩ VGS = 4.5V, ID = 20A
2.8 3.5 mΩ VGS = 10V, ID = 20A
17 22 nC VDS = 12.5V, ID = 20A, VGS = 4.5V
6.7 — nC VDS = 12.5V, ID = 20A
1.2 —
Ω—
Thermal Characteristics
Thermal Resistance Junction-to-X
RθJX — — 55 °C/W Note 1
Thermal Resistance Junction-to-Case RθJC — — 1.2 °C/W Note 2
Note 1:
2:
RθJX is determined with the device surface mounted on a 4-Layer FR4 PCB, with a 1" x 1" mounting pad of
2 oz. copper. This characteristic is dependent on user’s board design.
RθJC is determined using JEDEC 51-14 Method. This characteristic is determined by design.
2013 Microchip Technology Inc.
DS200002328B-page 3
1 page  
Note: Unless otherwise indicated, TA = +25°C.
1.7
ID = 250 μA
1.5
1.3
1.1
0.9
0.7
-75 -50 -25 0 25 50 75 100 125 150 175
TC - Case Temperature (°C)
FIGURE 2-7:
Gate-to-Source Threshold
Voltage vs. Temperature.
100
10
1
TC = +125°C
0.1
TC = +25°C
0.01
0.001
0.0
0.2 0.4 0.6 0.8
VSD - Source-to-Drain Voltage (V)
1.0
FIGURE 2-8:
Source-to-Drain Current vs.
Source-to-Drain Voltage.
1000
100
Operation in this range is
limited by RDS(on)
10
1 ms
10 ms
1 100 ms
1s
0.1
RșJA = 55 °C/W
Single Pulse
DC
0.01
0.01
0.1 1 10
VDS - Drain-to-Source Voltage (V)
100
FIGURE 2-9:
Area.
Maximum Safe Operating
MCP87030
120
100
80
60
40
20
0
0
25
FIGURE 2-10:
Temperature.
VGS = 10V
VGS = 4.5V
50 75 100 125
TC - Case Temperature (Û&
150
Maximum Drain Current vs.
1
0.1
0.01
0.001
0.001
FIGURE 2-11:
Impedance.
DC = 0.5
DC = 0.3
DC = 0.1
DC = 0.05
DC = 0.02
DC = 0.01
Single Pulse
0.1 10
t1 - Pulse Duration (s)
Transient Thermal
1000
100
10 TC = +150°C
TC = +25°C
1
0.01
0.1 1 10
tAV - Avalanche Time (ms)
100
FIGURE 2-12:
Single-Pulse Unclamped
Inductive Switching.
2013 Microchip Technology Inc.
DS200002328B-page 7
5 Page 
MCP87030
2013 Microchip Technology Inc.
DS200002328B-page 13
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet MCP87030.PDF ] | |
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