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부품번호 | MCP87022 기능 |
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기능 | High-Speed N-Channel Power MOSFET | ||
제조업체 | Microchip | ||
로고 | |||
전체 16 페이지수
MCP87022
High-Speed N-Channel Power MOSFET
Features:
• Low Drain-to-Source On Resistance (RDS(ON))
• Low Total Gate Charge (QG) and Gate-to-Drain
Charge (QGD)
• Low Series Gate Resistance (RG)
• Fast Switching
• Capable of Short Dead-Time Operation
• ROHS Compliant
Applications
• Point-of-Load DC-DC Converters
• High Efficiency Power Management in Servers,
Networking and Automotive Applications
Package Type
PDFN 5 x 6
Description
The MCP87022 is an N-Channel power MOSFET in a
popular PDFN 5 mm x 6 mm package. Advanced
packaging and silicon processing technologies allow
the MCP87022 to achieve a low QG for a given RDS(on)
value, resulting in a low Figure of Merit (FOM).
Combined with low RG, the low Figure of Merit of the
MCP87022 allows high efficiency power conversion
with reduced switching and conduction losses.
S1
S2
S3
G4
8D
7D
6D
5D
Product Summary Table: Unless otherwise indicated, TA = +25˚C
Parameters
Sym Min Typ Max Units
Conditions
Operating Characteristics
Drain-to-Source Breakdown Voltage
BVDSS 25 — —
V VGS = 0V, ID = 250 µA
Gate-to-Source Threshold Voltage
Drain-to-Source On Resistance
Total Gate Charge
VGS(TH) 1 1.3 1.6
RDS(ON)
—
—
2.2 2.6
1.9 2.3
QG — 25.5 29
V VDS = VGS, ID = 250 µA
mΩ VGS = 4.5V, ID = 25A
mΩ VGS = 10V, ID = 25A
nC VDS = 12.5V, ID = 25A, VGS = 4.5V
Gate-to-Drain Charge
QGD — 9 — nC VDS = 12.5V, ID = 25A
Series Gate Resistance
RG — 1.3 — Ω —
Thermal Characteristics
Thermal Resistance Junction-to-X
RθJX
— — 56 ˚C/W Note 1
Thermal Resistance Junction-to-Case
RθJC
— — 1.6 ˚C/W Note 2
Note 1: RθJX is determined with the device surface mounted on a 4-Layer FR4 PCB, with a 1” x 1” mounting pad of
2 oz. copper. This characteristic is dependent on user’s board design.
2: RθJC is determined using JEDEC 51-14 Method. This characteristic is determined by design.
2012 Microchip Technology Inc.
DS25133B-page 1
MCP87022
2.0 TYPICAL PERFORMANCE CURVES
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise indicated, TA = +25°C.
80
70
VGS = 10V
60
VGS = 4.5V
50
VGS = 3V
40
30
VGS = 2.5V
20
10
0
0.0 0.2 0.4 0.6
VDS - Drain-to-Source Voltage (V)
FIGURE 2-1:
Typical Output
Characteristics.
0.8
1.8
ID = 25A
1.6 VGS = 4.5V
1.4
1.2
1
0.8
0.6
0.4
-60 -40 -20 0 20 40 60 80 100 120 140 160
TC - Case Temperature (°C)
FIGURE 2-4:
Normalized On Resistance
vs. Temperature.
80
VDS = 5V
70
60
50
40
TC = +25°C
30
TC = +125°C
20
10 TC = -55°C
0
1 1.25 1.5 1.75 2 2.25 2.5 2.75
VGS - Gate-to-Source Voltage (V)
FIGURE 2-2:
Typical Transfer
Characteristics.
3
10
9 ID = 25A
8 VDS = 5V
7
6 VDS = 12.5V
5
4
3
2
1
0
0 5 10 15 20 25 30 35 40 45 50 55
FIGURE 2-5:
QG - Gate Charge (nC)
Gate-to-Source Voltage vs.
Gate Charge.
10
9 ID = 25A
8
7
6
5
4
3 TC = +125°C
2
1 TC = +25°C
0
0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
FIGURE 2-3:
On Resistance vs. Gate-to-
Source Voltage.
4.5
f = 1 MHz
4 VGS = 0V
3.5
3
2.5 CISS
2
1.5
1 COSS
0.5
0
0
CRSS
5 10 15 20
VDS - Drain-to-Source Voltage (V)
FIGURE 2-6:
Capacitance vs. Drain-to-
Source Voltage.
DS25133B-page 4
2012 Microchip Technology Inc.
4페이지 MCP87022
3.0 PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1: PIN FUNCTION TABLE
MCP87022
5x6 PDFN
Symbol
1, 2, 3
4
5, 6, 7, 8
S
G
D
Description
Source pin
Gate pin
Drain pin, including exposed thermal pad
2012 Microchip Technology Inc.
DS25133B-page 7
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부품번호 | 상세설명 및 기능 | 제조사 |
MCP87022 | High-Speed N-Channel Power MOSFET | Microchip |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |