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PDF MCP87050 Data sheet ( Hoja de datos )
| Número de pieza | MCP87050 | |
| Descripción | High-Speed N-Channel Power MOSFET | |
| Fabricantes | Microchip | |
| Logotipo |  |
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MCP87050
High-Speed N-Channel Power MOSFET
Features:
• Low Drain-to-Source On Resistance (RDS(ON))
• Low Total Gate Charge (QG) and Gate-to-Drain
Charge (QGD)
• Low Series Gate Resistance (RG)
• Fast Switching
• Capable of Short Dead-Time Operation
• RoHS Compliant
Applications
• Point-of-Load DC-DC Converters
• High Efficiency Power Management in Servers,
Networking, and Automotive Applications
Package Type
PDFN 5 x 6
Description
The MCP87050 is an N-Channel power MOSFET in a
popular PDFN 5 mm x 6 mm package. Advanced
packaging and silicon processing technologies allow
the MCP87050 to achieve a low QG for a given RDS(ON)
value, resulting in a low Figure of Merit (FOM).
Combined with low RG, the low Figure of Merit of the
MCP87050 allows high efficiency power conversion
with reduced switching and conduction losses.
S1
S2
S3
G4
8D
7D
6D
5D
Product Summary Table: Unless otherwise indicated, TA = +25˚C
Parameters
Sym Min Typ Max Units
Conditions
Operating Characteristics
Drain-to-Source Breakdown Voltage
Gate-to-Source Threshold Voltage
Drain-to-Source On Resistance
Total Gate Charge
Gate-to-Drain Charge
Series Gate Resistance
BVDSS 25 — —
VGS(TH) 1 1.3 1.6
RDS(ON) — 5.0 6.0
— 4.2 5.0
QG — 12.5 15
QGD — 4.7 —
RG — 1.1 —
V VGS = 0V, ID = 250 µA
V VDS = VGS, ID = 250 µA
mΩ VGS = 4.5V, ID = 20A
mΩ VGS = 10V, ID = 20A
nC VDS = 12.5V, ID = 20A, VGS = 4.5V
nC VDS = 12.5V, ID = 20A
Ω
Thermal Characteristics
Thermal Resistance Junction-to-X
RθJX — — 56 ˚C/W Note 1
Thermal Resistance Junction-to-Case
RθJC — — 1.9 ˚C/W Note 2
Note 1:
2:
RθJX is determined with the device surface mounted on a 4-Layer FR4 PCB, with a 1” x 1” mounting pad of
2 oz. copper. This characteristic is dependent on user’s board design.
RθJC is determined using JEDEC 51-14 Method. This characteristic is determined by design.
2012 Microchip Technology Inc.
DS22308B-page 1
1 page  
Note: Unless otherwise indicated, TA = +25°C.
1.7
ID = 250uA
1.5
1.3
1.1
0.9
0.7
-75 -50 -25 0 25 50 75 100 125 150 175
TC - Case Temperature (°C)
FIGURE 2-7:
Gate-to-Source Threshold
Voltage vs. Temperature.
100
10
1
TC = 125°C
TC = 25°C
0.1
0.01
0.001
0.0 0.2 0.4 0.6 0.8 1.0
VSVDS-DS-oSuorucrec-etot-oDrDarianinVoVlotaltgaege(V()V)
FIGURE 2-8:
Source-to-Drain Current vs.
Source-to-Drain Voltage.
1000
100
Operation in this range is
limited by RDS(on)
1ms
10
10ms
1 100ms
1s
0.1 DC
RθJA = 56 °C/W
Single Pulse
0.01
0.01 0.1 1 10 100
VDS - Drain to Source Voltage (V)
FIGURE 2-9:
Maximum Safe Operating
Area.
MCP87050
120
100
80
VGS = 4.5V
VGS = 10V
60
40
20
0
0 25 50 75 100 125 150
TC - Case Temperature (˚C)
FIGURE 2-10:
Maximum Drain Current vs.
Temperature.
1
0.1
0.01
DC = 0.5
DC = 0.3
DC = 0.1
DC = 0.05
DC = 0.02
DC = 0.01
Single Pulse
0.001
0.001
FIGURE 2-11:
Impedance.
100
0.1 10
t1 - Pulse Duration (s)
Transient Thermal
1000
TC = 25°C
10
TC = 150°C
1
0.01 0.1 1 10 100
tAv - Avalanche Time (ms)
FIGURE 2-12:
Single-Pulse Unclamped
Inductive Switching.
2012 Microchip Technology Inc.
DS22308B-page 5
5 Page 
MCP87050
2012 Microchip Technology Inc.
DS22308B-page 11
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet MCP87050.PDF ] | |
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