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PDF MCP87055 Data sheet ( Hoja de datos )
| Número de pieza | MCP87055 | |
| Descripción | High-Speed N-Channel Power MOSFET | |
| Fabricantes | Microchip | |
| Logotipo |  |
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MCP87055
High-Speed N-Channel Power MOSFET
Features
• Low Drain-to-Source On Resistance (RDS(ON))
• Low Total Gate Charge (QG) and Gate-to-Drain
Charge (QGD)
• Low Series Gate Resistance (RG)
• Fast Switching
• Capable of Short Dead-Time Operation
• ROHS Compliant
Applications
• Point-of-Load DC-DC Converters
• High Efficiency Power Management in Servers,
Networking, and Automotive Applications
Package Type
PDFN 3.3 x 3.3
Description
The MCP87055 device is an N-Channel power
MOSFET in a popular PDFN 3.3 mm x 3.3 mm
package. Advanced packaging and silicon processing
technologies allow the MCP87055 to achieve a low QG
for a given RDS(on) value, resulting in a low Figure of
Merit (FOM). Combined with low RG, the low Figure of
Merit of the MCP87055 allows high-efficiency power
conversion with reduced switching and conduction
losses.
S1
S2
S3
G4
8D
7D
6D
5D
Product Summary Table: Unless otherwise indicated, TA = +25˚C
Parameters
Sym Min Typ Max Units
Conditions
Operating Characteristics
Drain-to-Source Breakdown Voltage
BVDSS 25 — —
V VGS = 0V, ID = 250 µA
Gate-to-Source Threshold Voltage
VGS(TH) 1.1 1.35 1.7
V VDS = VGS, ID = 250 µA
Drain-to-Source On Resistance
Total Gate Charge
RDS(ON)
—
—
5.7
4.7
7
6
QG — 11 14
mΩ VGS = 4.5V, ID = 20A
mΩ VGS = 10V, ID = 20A
nC VDS = 12.5V, ID = 20A, VGS = 4.5V
Gate-to-Drain Charge
QGD
— 4.5 —
nC VDS = 12.5V, ID = 20A
Series Gate Resistance
RG — 2.1 — Ω
Thermal Characteristics
Thermal Resistance Junction-to-X
RθJX
— — 66 ˚C/W Note 1
Thermal Resistance Junction-to-Case
RθJC
— — 3.4 ˚C/W Note 2
Note 1: RθJX is determined with the device surface mounted on a 4-Layer FR4 PCB, with a 1” x 1” mounting pad of
2 oz. copper. This characteristic is dependent on user’s board design.
2: RθJC is determined using JEDEC 51-14 Method. This characteristic is determined by design.
2012 Microchip Technology Inc.
DS22323B-page 1
1 page  
Note: Unless otherwise indicated, TA = +25°C.
1.7
ID = 250 μA
1.5
1.3
1.1
0.9
0.7
-75 -50 -25 0 25 50 75 100 125 150 175
TC - Case Temperature (°C)
FIGURE 2-7:
Gate-to-Source Threshold
Voltage vs. Temperature.
100
10
1 TC = +125°C
0.1 TC = +25°C
0.01
0.001
0.0 0.2 0.4 0.6 0.8 1.0
VSD - Source to Drain Voltage (V)
FIGURE 2-8:
Source-to-Drain Current vs.
Source-to-Drain Voltage.
1000
100
Operation in this range is
limited by RDS(on)
10 1 ms
10 ms
1 100 ms
0.1
0.01
RθJA = 66 °C/W
Single Pulse
1s
DC
0.01 0.1 1 10
VDS - Drain-to-Source Voltage (V)
100
FIGURE 2-9:
Area.
Maximum Safe Operating
MCP87055
70
60
50
40
30
20
10
0
0
25
FIGURE 2-10:
Temperature.
VGS = 10V
VGS = 4.5V
50 75 100 125
TC - Case Temperature (˚C)
150
Maximum Drain Current vs.
1
0.1
0.01
0.001
0.001
FIGURE 2-11:
Impedance.
DC = 0.5
DC = 0.3
DC = 0.1
DC = 0.05
DC = 0.02
DC = 0.01
Single Pulse
0.1 10
t1 - Pulse Duration (s)
Transient Thermal
1000
100
10 TC = +25°C
TC = +150°C
1
0.01
0.1
1
10 100
tAV - Avalanche Time (ms)
FIGURE 2-12:
Single-Pulse Unclamped
Inductive Switching.
2012 Microchip Technology Inc.
DS22323B-page 5
5 Page 
MCP87055
2012 Microchip Technology Inc.
DS22323B-page 11
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet MCP87055.PDF ] | |
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