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PDF MCP87090 Data sheet ( Hoja de datos )
| Número de pieza | MCP87090 | |
| Descripción | High-Speed N-Channel Power MOSFET | |
| Fabricantes | Microchip | |
| Logotipo |  |
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MCP87090
High-Speed N-Channel Power MOSFET
Features:
• Low Drain-to-Source On Resistance (RDS(ON))
• Low Total Gate Charge (QG) and Gate-to-Drain
Charge (QGD)
• Low Series Gate Resistance (RG)
• Capable of Short Dead-Time Operation
• RoHS Compliant
Applications:
• Point-of-Load DC-DC Converters
• High Efficiency Power Management in Servers,
Networking, and Automotive Applications
Description:
The MCP87090 is an N-Channel power MOSFET in a
popular PDFN 5 mm x 6 mm package, as well as a
PDFN 3.3 mm x 3.3 mm package. Advanced
packaging and silicon processing technologies allow
the MCP87090 to achieve a low QG for a given RDS(ON)
value, resulting in a low Figure of Merit (FOM).
Combined with low RG, the low FOM of the MCP87090
device allows high efficiency power conversion with
reduced switching and conduction losses.
Package Type
PDFN 5 x 6
PDFN 3.3 x 3.3
S1
8D
S2
7D
S3
6D
G4
5D
Product Summary Table: Unless otherwise indicated, TA = +25˚C
Parameters
Sym Min Typ Max Units
Conditions
Operating Characteristics
Drain-to-Source Breakdown Voltage
Gate-to-Source Threshold Voltage
Drain-to-Source On Resistance
Total Gate Charge
Gate-to-Drain Charge
Series Gate Resistance
BVDSS 25 — —
VGS(TH) 1.1 1.35 1.7
RDS(ON)
—
—
10 12
8.5 10.5
QG — 7.5 10
QGD
— 2.8 —
RG — 1.8 —
V VGS = 0V, ID = 250 µA
V VDS = VGS, ID = 250 µA
mΩ VGS = 4.5V, ID = 17A
mΩ VGS = 10V, ID = 17A
nC VDS = 12.5V, ID = 17A, VGS = 4.5V
nC VDS = 12.5V, ID = 17A
Ω
Thermal Characteristics
Thermal Resistance Junction-to-X, 8L 3.3x3.3-PDFN
RθJX
— — 66 °C/W Note 1
Thermal Resistance Junction-to-Case, 8L 3.3x3.3-PDFN RθJC — — 3.5 °C/W Note 2
Thermal Resistance Junction-to-X, 8L 5x6-PDFN
RθJX
— — 56 °C/W Note 1
Thermal Resistance Junction-to-Case, 8L 5x6-PDFN
RθJC
— — 2.0 °C/W Note 2
Note 1: RθJX is determined with the device surface mounted on a 4-Layer FR4 PCB, with a 1” x 1” mounting pad of 2 oz. copper.
This characteristic is dependent on user’s board design.
2: RθJC is determined using JEDEC 51-14 Method. This characteristic is determined by design.
2013 Microchip Technology Inc.
DS22332A-page 1
1 page  
Note: Unless otherwise indicated, TA = +25°C.
1.7
ID = 250 μA
1.5
1.3
1.1
0.9
-75 -50 -25 0 25 50 75 100 125 150 175
TC - Case Temperature (°C)
FIGURE 2-7:
Gate-to-Source Threshold
Voltage vs. Temperature.
100
10
1
TC = +125°C
TC = +25°C
0.1
0.01
0.001
0.0
0.2 0.4 0.6 0.8
VSD - Source-to-Drain Voltage (V)
1.0
FIGURE 2-8:
Source-to-Drain Current vs.
Source-to-Drain Voltage.
100
90
80
70
60
50 VGS = 10V
40 VGS = 4.5V
30
20
10
0
0 25 50 75 100 125 150
TC - Case Temperature (˚C)
FIGURE 2-9:
Maximum Drain Current vs.
Temperature 5x6-PDFN (MCP87090T-U/MF).
MCP87090
100
10
TC = +25°C
TC = +150°C
1
0.01
0.1 1 10
tAV - Avalanche Time (ms)
100
FIGURE 2-10:
Single-Pulse Unclamped
Inductive Switching.
80
70
60
50
VGS = 10V
40
30 VGS = 4.5V
20
10
0
0 25 50 75 100 125 150
TC - Case Temperature (˚C)
FIGURE 2-11:
Maximum Drain Current vs.
Temperature 3.3x3.3-PDFN (MCP87090T-U/LC).
31
30 ID = 250 μA
29
28
27
26
25
-60 -40 -20 0 20 40 60 80 100 120 140 160
TC - Case Temperature(°C)
FIGURE 2-12:
Drain-to-Source Breakdown
Voltage vs. Temperature.
2013 Microchip Technology Inc.
DS22332A-page 5
5 Page 
MCP87090
2013 Microchip Technology Inc.
DS22332A-page 11
11 Page | ||
| Páginas | Total 18 Páginas | |
| PDF Descargar | [ Datasheet MCP87090.PDF ] | |
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