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부품번호 | NJVMJB42CT4G 기능 |
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기능 | Complementary Silicon Plastic Power Transistors | ||
제조업체 | ON Semiconductor | ||
로고 | |||
전체 6 페이지수
MJB41C,
NJVMJB41CT4G (NPN),
MJB42C,
NJVMJB42CT4G (PNP)
Complementary Silicon
Plastic Power Transistors
D2PAK for Surface Mount
Features
• Lead Formed for Surface Mount Applications in Plastic Sleeves
(No Suffix)
• Electrically the Same as TIP41 and T1P42 Series
• NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• Pb−Free Packages are Available
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter−Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current − Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ− Peak
VCEO 100 Vdc
VCB 100 Vdc
VEB 5.0 Vdc
IC 6.0 Adc
10
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ@ TC = 25_C
Derate above 25_C
IB 2.0 Adc
PD
65 W
0.52 W/_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ@ TA = 25_C
Derate above 25_C
PD
2.0 W
0.016
W/_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎUnclamped Inductive Load Energy (Note 1)
E
62.5 mJ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTemperature Range
TJ, Tstg −65 to +150 _C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
Symbol
Max
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction−to−Case
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance,
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎJunction−to−Ambient
RqJC
RqJA
1.92 _C/W
62.5 _C/W
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance,
Junction−to−Ambient (Note 2)
RqJA
50 _C/W
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMaximum Lead Temperature for Soldering
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎPurposes, 1/8″ from Case for 10 Seconds
TL
260 _C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎStresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. IC = 2.5 A, L = 20 mH, P.R.F. = 10 Hz, VCC = 10 V, RBE = 100 W
2. When surface mounted to an FR−4 board using the minimum recommended
pad size.
© Semiconductor Components Industries, LLC, 2013
May, 2013 − Rev. 4
1
http://onsemi.com
COMPLEMENTARY SILICON
POWER TRANSISTORS
6 AMPERES,
100 VOLTS, 65 WATTS
MARKING
DIAGRAM
D2PAK
CASE 418B
STYLE 1
J4xCG
AYWW
J4xC
A
Y
WW
G
= Specific Device Code
x = 1 or 2
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping†
MJB41CG
D2PAK
50 Units / Rail
(Pb−Free)
MJB41CT4G
D2PAK
(Pb−Free)
800 / Tape &
Reel
NJVMJB41CT4G
D2PAK
(Pb−Free)
800 / Tape &
Reel
MJB42CG
D2PAK
50 Units / Rail
(Pb−Free)
MJB42CT4G
D2PAK
(Pb−Free)
800 / Tape &
Reel
NJVMJB42CT4G
D2PAK
(Pb−Free)
800 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
MJB41C/D
MJB41C, NJVMJB41CT4G (NPN), MJB42C, NJVMJB42CT4G (PNP)
500
300
200 TJ = 150°C
100
70 25°C
50
30
20 - 55°C
VCE = 2.0 V
10
7.0
5.0
0.06
0.1
0.2 0.3 0.4 0.6 1.0
2.0
IC, COLLECTOR CURRENT (AMP)
Figure 8. DC Current Gain
4.0 6.0
2.0
TJ = 25°C
1.6
1.2 IC = 1.0 A 2.5 A 5.0 A
0.8
0.4
0
10 20 30 50
100 200 300 500 1000
IB, BASE CURRENT (mA)
Figure 9. Collector Saturation Region
2.0
TJ = 25°C
1.6
1.2
0.8 VBE(sat) @ IC/IB = 10
VBE @ VCE = 4.0 V
0.4
VCE(sat) @ IC/IB = 10
0
0.06 0.1
0.2 0.3 0.4 0.6
1.0
2.0 3.0 4.0 6.0
IC, COLLECTOR CURRENT (AMP)
Figure 10. “On” Voltages
+ 2.5
+ 2.0 *APPLIES FOR IC/IB ≤ hFE/4
+ 1.5
+ 1.0
+ 0.5
* qVC FOR VCE(sat)
0
- 0.5
- 1.0
+ 25°C to + 150°C
- 55°C to + 25°C
+ 25°C to + 150°C
- 1.5 qVB FOR VBE
- 2.0
- 55°C to + 25°C
- 2.5
0.06 0.1
0.2 0.3 0.5
1.0 2.0 3.0 4.0 6.0
IC, COLLECTOR CURRENT (AMP)
Figure 11. Temperature Coefficients
103
VCE = 30 V
102
TJ = 150°C
101 100°C
100
25°C
10-1 IC = ICES
10-2 REVERSE
FORWARD
10-3
- 0.3 - 0.2 - 0.1 0 + 0.1 + 0.2 + 0.3 + 0.4 + 0.5 + 0.6 + 0.7
VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure 12. Collector Cut−Off Region
10 M
1.0 M
100 k
IC ≈ ICES
IC = 10 x ICES
VCE = 30 V
10 k
IC = 2 x ICES
1.0 k (TYPICAL ICES VALUES
OBTAINED FROM FIGURE 12)
0.1 k
20 40 60 80 100 120 140 160
TJ, JUNCTION TEMPERATURE (°C)
Figure 13. Effects of Base−Emitter Resistance
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부품번호 | 상세설명 및 기능 | 제조사 |
NJVMJB42CT4G | Complementary Silicon Plastic Power Transistors | ON Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |