(PDF) MJD340 Datasheet - NPN Epitaxial Silicon Transistor

Número de pieza	MJD340
Descripción	NPN Epitaxial Silicon Transistor
Fabricantes	Kexin
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No Preview Available ! SMD Type Transistors NPN Epitaxial Silicon Transistor MJD340 Features Load Formed for Surface Mount Application Straight Lead TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30+0.1 -0.1 0.50+0.8 -0.7 Unit: mm 0.80+0.1 -0.1 0.127 max 2.3 4.60+0.15 -0.15 0.60+0.1 -0.1 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 unless otherwise noted Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation (TC = 25 ) Collector Dissipation (Ta = 25 ) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC TJ TSTG Rating 300 300 3 0.5 0.75 15 1.56 150 -65 to 150 Unit V V V A A A W W Electrical Characteristics Ta = 25 unless otherwise noted Parameter Collector-Emitter Sustaining Voltage * Collector Cut-off Current Emitter Cut-off Current DC Current Gain * *Pulse Test: PW 300ìs, Duty Cycle 2% Symbol VCEO(sus) ICEO IEBO hFE Testconditons IC = 1mA, IB = 0 VCB = 300V, IE =0 VEB = 3V, IC = 0 VCE = 10V, IC = 50mA Min Typ Max Unit 300 V 0.1 mA 0.1 mA 30 240 www.kexin.com.cn 1 1 page

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PDF MJD340 Data sheet ( Hoja de datos )