(PDF) MJD41C Datasheet - Silicon NPN Power Transistor

Número de pieza	MJD41C
Descripción	Silicon NPN Power Transistor
Fabricantes	Inchange Semiconductor
Logotipo
Hay una vista previa y un enlace de descarga de MJD41C (archivo pdf) en la parte inferior de esta página. Total 3 Páginas
No Preview Available ! isc Silicon NPN Power Transistors INCHANGE Semiconductor MJD41C DESCRIPTION ·DC Current Gain -hFE = 30(Min)@ IC= 0.3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) ·Complement to Type MJD42C ·DPAK for Surface Mount Applications ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose amplifer and low speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous 6A ICM Collector Current-Peak 10 A IB Base Current Collector Power Dissipation TC=25℃ PC Collector Power Dissipation Ta=25℃ Tj Junction Temperature 2A 20 W 1.75 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 6.25 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 71.4 ℃/W isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark 1 page

Páginas	Total 3 Páginas
PDF Descargar	[ Datasheet MJD41C.PDF ]

Número de pieza	Descripción	Fabricantes
SLA6805M	High Voltage 3 phase Motor Driver IC.	Sanken
SDC1742	12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.	Analog Devices

PDF MJD41C Data sheet ( Hoja de datos )