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Datasheet MJD42C Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1MJD42CSilicon PNP Power Transistor

isc Silicon PNP Power Transistors INCHANGE Semiconductor MJD42C DESCRIPTION ·DC Current Gain -hFE = 30(Min)@ IC= -0.3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min) ·Complement to Type MJD41C ·DPAK for Surface Mount Applications ·Minimum Lot-to-Lot variations for robust devi
Inchange Semiconductor
Inchange Semiconductor
transistor
2MJD42CComplementary Power Transistors

SMD Type Transistors Complementary Power Transistors MJD41C(NPN) MJD42C(PNP) Features Lead Formed for Surface Mount Applications in Plastic Sleeves Monolithic Construction With Built?in Base ? Emitter Resistors Pb-Free Packages are Available +09.70 .2 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2
Kexin
Kexin
transistor
3MJD42CGeneral Purpose Amplifier

MJD42C MJD42C General Purpose Amplifier Low Speed Switching Applications • Load Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular TIP42C 1 D-PAK 1.Base 1 I-PAK 3.Emitter 2.Collector PNP Epitaxial Silicon Transisto
Fairchild
Fairchild
amplifier
4MJD42CComplementary Power Transistors

MJD41C (NPN), MJD42C (PNP) Complementary Power Transistors DPAK for Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic
ON
ON
transistor
5MJD42CSILICON POWER TRANSISTORS 6 AMPERES 100 VOLTS 20 WATTS

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJD41C/D Complementary Power Transistors • • • • • MJD41C* PNP MJD42C* *Motorola Preferred Device NPN DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Lead For
Motorola Semiconductors
Motorola Semiconductors
transistor


MJD Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1MJD112Silicon NPN transistor

MJD112 Rev.E May.-2016 DATA SHEET 描述 / Descriptions TO-252 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-252 Plastic Package.  特征 / Features 直流电流增益高,E 与 C 间内置阻尼二极管电性能与 TIP112 等同。 High DC current gain, built-in a damp
BLUE ROCKET ELECTRONICS
BLUE ROCKET ELECTRONICS
transistor
2MJD112Silicon NPN epitaxial planer Transistors

MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MJD112 Features • Lead Free Finish/RoHS Compliant("P" Suffix designates RoHS Compliant. See ordering information) • Case Material:Molded Plast
MCC
MCC
transistor
3MJD112Silicon NPN Power Transistor

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor MJD112 DESCRIPTION ·High DC current gain ·Lead formed for surface mount applications(NO suffix) ·Straight lead(IPAK,“-I”suffix) ·Built-in a damper diode at E-C ·100% avalanche tested ·Minimum Lot-to-Lot variations for
Inchange Semiconductor
Inchange Semiconductor
transistor
4MJD112NPN Silicon Darlington Transistor

MJD112 NPN Silicon Darlington Transistor MJD112 NPN Silicon Darlington Transistor Features • High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications (No Suffix) November 2006 tm Equivalent Circuit C B 1 D-PAK 1.Base 2.Collector 3.Emitter R1 R2
Fairchild Semiconductor
Fairchild Semiconductor
transistor
5MJD112COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS MJD112 NPN MJD117 PNP DPAK (TO-252) Plastic Package Designed for General Purpose Power and Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION Coll
CDIL
CDIL
transistor
6MJD112NPN Transistor

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate Transistors MJD112 TRANSISTOR (NPN) yFEATURES Complementary Darlington Power Transistors Dpak for Surface Mount Applications TO-251-3L 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise note
JCET
JCET
transistor
7MJD112Complementary Darlington Power Transistors

MJD112 (NPN), MJD117 (PNP) Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surf
ON
ON
transistor



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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