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MJE13005F PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 MJE13005F
기능 Silicon NPN Power Transistor
제조업체 Inchange Semiconductor
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MJE13005F 데이터시트, 핀배열, 회로
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·Collector–Emitter Sustaining Voltage
: VCEO(SUS) = 400V(Min.)
·Collector Saturation Voltage
: VCE(sat) = 0.6(Max) @ IC= 2.0A
·Switching Time
: tf= 0.9μs(Max.)@ IC= 2.0A
APPLICATIONS
·Designed for use in high-voltage, high-speed, power swit-
ching in inductive circuit, they are particularly suited for
115 and 220V switchmode applications such as switching
regulators,inverters,Motor controls,Solenoid/Relay drivers
and deflection circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VCEV
Collector-Emitter Voltage
VALUE
700
VCEO
Collector-Emitter Voltage
400
VEBO
Emitter-Base Voltage
9
IC Collector Current-Continuous
4
ICM Collector Current-peak
8
IB Base Current
2
IBM Base Current-Peak
4
IE Emitter Current
6
IEM Emitter Current-Peak
Collector Power Dissipation
PC
Ta=25
Collector Power Dissipation
TC=25
Ti Junction Temperature
12
2
75
150
Tstg Storage Temperature Range
-65~150
UNIT
V
V
V
A
A
A
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
Rth j-a Thermal Resistance,Junction to Ambient
MAX UNIT
1.67 /W
62.5 /W
isc Product Specification
MJE13005F
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark






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