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PDF MJE13005F Data sheet ( Hoja de datos )
| Número de pieza | MJE13005F | |
| Descripción | Silicon NPN Power Transistor | |
| Fabricantes | Inchange Semiconductor | |
| Logotipo |  |
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·Collector–Emitter Sustaining Voltage
: VCEO(SUS) = 400V(Min.)
·Collector Saturation Voltage
: VCE(sat) = 0.6(Max) @ IC= 2.0A
·Switching Time
: tf= 0.9μs(Max.)@ IC= 2.0A
APPLICATIONS
·Designed for use in high-voltage, high-speed, power swit-
ching in inductive circuit, they are particularly suited for
115 and 220V switchmode applications such as switching
regulators,inverters,Motor controls,Solenoid/Relay drivers
and deflection circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VCEV
Collector-Emitter Voltage
VALUE
700
VCEO
Collector-Emitter Voltage
400
VEBO
Emitter-Base Voltage
9
IC Collector Current-Continuous
4
ICM Collector Current-peak
8
IB Base Current
2
IBM Base Current-Peak
4
IE Emitter Current
6
IEM Emitter Current-Peak
Collector Power Dissipation
PC
Ta=25℃
Collector Power Dissipation
TC=25℃
Ti Junction Temperature
12
2
75
150
Tstg Storage Temperature Range
-65~150
UNIT
V
V
V
A
A
A
A
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
Rth j-a Thermal Resistance,Junction to Ambient
MAX UNIT
1.67 ℃/W
62.5 ℃/W
isc Product Specification
MJE13005F
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MJE13005F.PDF ] | |
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