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PDF MJE350 Data sheet ( Hoja de datos )
| Número de pieza | MJE350 | |
| Descripción | PNP EPITAXIAL SILICON POWER TRANSISTOR | |
| Fabricantes | CDIL | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MJE350 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP EPITAXIAL SILICON POWER TRANSISTOR
MJE350
TO126
Plastic Package
ECB
Designed for use in Line-Operated Applications sush as Low Power, Line- Operated Series
Pass and Switching Regulators
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector -Emitter Voltage
Collector -Base Voltage
Emitter Base Voltage
Collector Current Continuous
Power Dissipation @ Ta=25ºC
Derate above 25ºC
Power Dissipation @ Tc=25ºC
Derate above 25ºC
Operating And Storage Junction
Temperature Range
SYMBOL
VCEO
VCBO
VEBO
IC
PD
PD
Tj, Tstg
VALUE
300
300
3.0
500
1.25
10
20
0.16
- 65 to +150
UNIT
V
V
V
mA
W
mW/ºC
W
W/ºC
ºC
THERMAL CHARACTERISTICS
Junction to Ambient in free air
Junction to Case
Rth (j-a)
Rth (j-c)
100
6.25
ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
Collector Emitter Sustaining Voltage
VCEO (sus)
IC=1mA, IB=0
Collector Cut Off Current
ICBO VCB=300V, IE=0
Emitter Cut Off Current
IEBO
VEB=3V, IC=0
DC Current Gain
hFE IC=50mA, VCE=10V
MIN
300
30
ºC/W
ºC/W
MAX
100
100
240
UNIT
V
µA
µA
Continental Device India Limited
Data Sheet
Page 1 of 3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet MJE350.PDF ] | |
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