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PDF MJE340 Data sheet ( Hoja de datos )
| Número de pieza | MJE340 | |
| Descripción | Plastic Medium-Power NPN Silicon Transistor | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MJE340 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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MJE340
Plastic Medium−Power
NPN Silicon Transistor
This device is useful for high−voltage general purpose applications.
Features
• Suitable for Transformerless, Line−Operated Equipment
• Thermopad Construction Provides High Power Dissipation Rating
for High Reliability
• Pb−Free Package is Available*
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter−Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current − Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation @ TC = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction
Temperature Range
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction−to−Case
Symbol
VCEO
VEB
IC
PD
TJ, Tstg
Value
Unit
300 Vdc
3.0 Vdc
500 mAdc
20 W
0.16 mW/_C
–65 to +150 _C
Symbol
qJC
Max
6.25
Unit
_C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Emitter Sustaining Voltage
(IC = 1.0 mAdc, IB = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCB = 300 Vdc, IE = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎON CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDC Current Gain
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 50 mAdc, VCE = 10 Vdc)
Symbol Min Max Unit
VCEO(sus) 300 −
Vdc
ICBO
− 100 mAdc
IEBO
− 100 mAdc
hFE 30 240 −
http://onsemi.com
0.5 AMPERE
POWER TRANSISTOR
NPN SILICON
300 VOLTS, 20 WATTS
321
TO−225
CASE 77
STYLE 1
MARKING DIAGRAM
YWW
JE340G
Y = Year
WW = Work Week
JE340 = Device Code
G = Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
MJE340
MJE340G
TO−225
TO−225
(Pb−Free)
500 Units/Box
500 Units/Box
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 11
1
Publication Order Number:
MJE340/D
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet MJE340.PDF ] | |
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