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PDF SST12LF02 Data sheet ( Hoja de datos )
| Número de pieza | SST12LF02 | |
| Descripción | High-Efficiency FEM | |
| Fabricantes | Microchip | |
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2.4 GHz WLAN High-Gain, High-Efficiency FEM
SST12LF02
Data Sheet
SST12LF02 is a 2.4 GHz Front-End Module (FEM) that combines a high-perfor-
mance Power Amplifier (PA) and a single-pole, three-throw, antenna switch for Tx/
Rx and Bluetooth® control. Designed in compliance with IEEE 802.11 b/g/n/256
QAM applications and based on GaAs PHEMT/HBT technology, the SST12LF02
operates within the frequency range of 2.4- 2.5 GHz at a very low DC-current con-
sumption. The Transmitter chain has excellent linearity, typically 3% EVM up to 18
dBm output power, for 54 Mbps 802.11g operation while meeting 802.11g spec-
trum mask at 21 dBm. The transmitter will also provide 17 dBm with 11n, MCS7-
HT40 modulation and 16 dBm with 256 QAM MCS9-HT40 modulation.
SST12LF02 is offered in a 16-contact XQFN package.
Features
• High gain:
– Typically 29 dB gain across 2.4–2.5 GHz over tempera-
ture 0°C to +85°C for Transmitter (TX) chain.
• High linear output power:
– >24 dBm P1dB
- Single-tone measurement
- Please refer to “Absolute Maximum Stress Ratings” on
page 6
– Meets 802.11g OFDM ACPR requirement up to 21 dBm
– ~3% EVM up to 18 dBm for
54 Mbps 802.11g signal
– Meets 802.11b ACPR requirement up to 21 dBm
– 2.5% EVM up to 17 dBm for 11n, MCS7-HT40
– 1.8% EVM up to 16 dBm for 256 QAM MCS9-HT40
• High power-added efficiency/Low operating cur-
rent for 802.11b/g/n applications
– ~27%/160 mA @ POUT = 21 dBm for 802.11g
– ~26%/165 mA @ POUT = 21 dBm for 802.11b
• Low IREF power-up/down control
– IREF <2 mA
• Low idle current
– ~65 mA ICQ for 11g operation
– ~80 mA ICQ for 11n and 256 QAM operation
• High-speed power-up/down
– Turn on/off time (10%- 90%) <100 ns
– Typical power-up/down delay with driver delay included
<200 ns
• Low shut-down current (~2 µA)
• Limited variation over temperature
– ~1 dB gain/power variation between 0°C to +85°C
• Excellent on-chip power detection
– >15 dB dynamic range on-chip power detection
• Input/output ports matched to 50 internally and
DC decoupled.
• Packages available
– 16-contact XQFN – 3mm x 3mm
• All non-Pb (lead-free) devices are RoHS compliant
Applications
• WLAN (IEEE 802.11b/g/n)
• Cordless phones
• 2.4 GHz ISM wireless equipment
© 2015
www.microchip.com
DS-70005001D
01/15
1 page  
2.4 GHz WLAN High-Gain, High-Efficiency FEM
SST12LF02
Pin Descriptions
Data Sheet
Table 1: Pin Description
Symbol
GND
RX
GND
TX
VREG
P_Det
VCC1
NC
NC
VCC2
GND
ANT
Pin No.
0
1
2
3
4
5
6
7
8
9
10
11
Pin Name
Ground
Ground
Power Sup-
ply
No Connec-
tion
No Connec-
tion
Power Sup-
ply
Ground
GND
BT
12 Ground
13
BT_C
TX_C
RX_C
14
15
16
1. I=Input, O=Output
Type1
0
I
PWR
O
PWR
Function
Low inductance ground pad
RF output for receive path, DC decoupled.
Ground pad
RF input for transmit path, DC decoupled
1st and 2nd stage idle current control
On-chip power detector
Power supply, 1st stage
Unconnected Pin
Unconnected Pin
PWR Power supply, 2nd stage
I/O
I/O
PWR
PWR
PWR
Ground pad
RF input for receive path, and RF output for transmit path, DC
decoupled
Ground pad
RF output for receive path, and RF input for transmit path, DC
decoupled. Used for Bluetooth®
Switch control pin for BT (bidirectional) path.
Switch control pin for TX path
Switch control pin for RX path
T1.0 75001
© 2015
DS-70005001D
01/15
5
5 Page 
2.4 GHz WLAN High-Gain, High-Efficiency FEM
SST12LF02
Data Sheet
Dynamic EVM versus Output Power
11ac, 40MHz BW, MCS9, 180Mbps
10
9
8 2412
7 2442
6
2472
5
4
3
2
1
0
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20
Output Power (dBm)
1418 F13.0
Figure 6: Dynamic EVM vs Output Power for MCS9-HT40 Modulation
Power Gain versus Output Power
40
38 Freq=2.412 GHz
36 Freq=2.442 GHz
34 Freq=2.472 GHz
32
30
28
26
24
22
20
9
10 11 12 13 14 15 16 17 18 19 20 21 22 23
Output Power (dBm)
1418 F5.1
Figure 7: Power Gain versus Output Power
© 2015
DS-70005001D
01/15
11
11 Page | ||
| Páginas | Total 17 Páginas | |
| PDF Descargar | [ Datasheet SST12LF02.PDF ] | |
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