Datasheet.kr   

SST12LP17E 데이터시트 PDF




Microchip에서 제조한 전자 부품 SST12LP17E은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

PDF 형식의 SST12LP17E 자료 제공

부품번호 SST12LP17E 기능
기능 High-Gain Power Amplifier Module
제조업체 Microchip
로고 Microchip 로고


SST12LP17E 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 15 페이지수

미리보기를 사용할 수 없습니다

SST12LP17E 데이터시트, 핀배열, 회로
2.4 GHz High-Efficiency, High-Gain Power Amplifier Module
SST12LP17E
Data Sheet
SST12LP17E is a 2.4 GHz high-efficiency, fully-matched power amplifier module
based on the highly-reliable InGaP/GaAs HBT technology. It is designed in compli-
ance with IEEE 802.11b/g/n applications and typically provides 28 dB gain with 28%
power-added efficiency at 21dBm. SST12LP17E has excellent linearity, providing
3% EVM at typically 18 dBm, while meeting 802.11g spectrum mask at 21.5 dBm.
This power amplifier requires no external RF matching, and only requires one exter-
nal DC-bias capacitor to meet the specified performance. It offers high-speed
power-up/-down control through a single reference voltage pin and includes a tem-
perature-stable, VSWR insensitive power detector voltage output. SST12LP17E is
offered in a super-thin (0.4mm maximum) 8-contact X2SON package and a 8-con-
tact USON package.
Features
• Input/Output ports internally matched to 50and
DC decoupled
• High gain:
– Typically 28 dB gain across 2.4–2.5 GHz
• High linear output power:
– >24 dBm P1dB
- Single-tone measurement. Please refer to “Absolute
Maximum Stress Ratings” on page 5
– Meets 802.11g OFDM ACPR requirement up to 21.5
dBm
– 3% EVM up to 18 dBm for 54 Mbps 802.11g signal
– 2.5% EVM up to 17 dBm for 802.11n, MCS7, 40 MHz
– Meets 802.11b ACPR requirement up to 22.5 dBm
– Meets Bluetooth® spectrum mask for 3 Mbps at 17 dBm
typical
• High power-added efficiency/Low operating cur-
rent for 802.11b/g/n applications
– ~28%/138 mA @ POUT = 21.5 dBm for 802.11g
– ~33%/155 mA @ POUT = 22.5 dBm for 802.11b
• Single-pin low IREF power-up/down control
– IREF <2 mA
• Low idle current
– ~60 mA ICQ
• High-speed power-up/down
– Turn on/off time (10%- 90%) <100 ns
– Typical power-up/down delay with driver delay included
<200 ns
• Low shut-down current (~2 µA)
• Stable performance over temperature
– ~2 dB gain variation between -40°C to +85°C
– ~1 dB power variation between -40°C to +85°C
• Excellent on-chip power detection
– >15 dB dynamic range, dB-wise linear
– VSWR insensitive, temperature stable
• Packages available
– 8-contact X2SON – 2mm x 2mm x 0.4mm
– 8-contact USON – 2mm x 2mm x 0.6mm
• Non-Pb (lead-free), RoHS compliant, and Halogen free
Applications
• WLAN (IEEE 802.11b/g/n)
• Bluetooth®
• Cordless phones
• 2.4 GHz ISM wireless equipment
©2014 Silicon Storage Technology, Inc.
www.microchip.com
DS-70005004G 10/14




SST12LP17E pdf, 반도체, 판매, 대치품
2.4 GHz High-Efficiency, High-Gain Power Amplifier Module
SST12LP17E
Pin Assignments
Data Sheet
VCC2
1
VCC1
2
RFIN
3
VREF
4
Top View
(Contacts
facing down)
RF & DC
Ground
0
8 DNU
7 DNU
6 RFOUT
5 DET
1426 F2.0
Figure 2: Pin Assignments for 8-contact X2SON and 8-contact USON
Pin Descriptions
Table 1: Pin Description
Symbol
GND
VCC2
VCC1
RFIN
VREF
DET
RFOUT
DNU
DNU
Pin No.
0
1
2
3
4
5
6
7
8
Pin Name
Ground
Power Supply
Power Supply
Do Not Use
Do Not Use
1. I=Input, O=Output
Type1
PWR
PWR
I
PWR
O
O
Function
Low inductance ground pad
Power supply, 2nd stage
Power supply, 1st stage
RF input, DC decoupled
1st and 2nd stage idle current control
On-chip power detector
RF output, DC decoupled
Do not use or connect
Do not use or connect
T1.0 75004
©2014 Silicon Storage Technology, Inc.
4
DS-70005004G 10/14

4페이지










SST12LP17E 전자부품, 판매, 대치품
2.4 GHz High-Efficiency, High-Gain Power Amplifier Module
SST12LP17E
Typical Performance Characteristics
Test Conditions: VCC = 3.3V, TA = 25°C, unless otherwise specified
Data Sheet
S11 versus Frequency
10
0
-10
-20
-30
-40
-50
-60
0 1 2 3 4 5 6 7 8 9 10
Frequency (GHz)
S12 versus Frequency
10
0
-10
-20
-30
-40
-50
-60
0 1 2 3 4 5 6 7 8 9 10
Frequency (GHz)
S21 versus Frequency
40
30
20
10
0
-10
-20
-30
-40
-50
0 1 2 3 4 5 6 7 8 9 10
Frequency (GHz)
Figure 3: S-Parameters
S22 versus Frequency
10
0
-10
-20
-30
-40
-50
-60
0 1 2 3 4 5 6 7 8 9 10
Frequency (GHz)
1426 S-Parms.1.2
©2014 Silicon Storage Technology, Inc.
7
DS-70005004G 10/14

7페이지


구       성 총 15 페이지수
다운로드[ SST12LP17E.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
SST12LP17E

High-Gain Power Amplifier Module

Microchip
Microchip

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵