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PDF 3EZ120D10 Data sheet ( Hoja de datos )

Número de pieza 3EZ120D10
Descripción SILICON ZENER DIODES
Fabricantes EIC 
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No Preview Available ! 3EZ120D10 Hoja de datos, Descripción, Manual

Certificate TH97/10561QM
Certificate TW00/17276EM
3EZ3.9D10 ~ 3EZ200D10
SILICON ZENER DIODES
VZ : 3.9 - 200 Volts
PD : 3 Watts
DO - 41
FEATURES :
* Complete Voltage Range 3.9 to 200 Volts
* High peak reverse power dissipation
* High reliability
* Low leakage current
* Pb / RoHS Free
0.108 (2.74)
0.078 (1.99)
1.00 (25.4)
MIN.
0.205 (5.20)
0.161 (4.10)
MECHANICAL DATA
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.339 gram
MAXIMUM RATINGS
Rating at 25 °C ambient temperature unless otherwise specified
Rating
DC Power Dissipation at TL = 75 °C (Note1)
Maximum Forward Voltage at IF = 200 mA
Maximum Thermal Resistance Junction to Ambient Air (Note2)
Junction Temperature Range
Storage Temperature Range
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
Symbol
PD
VF
RθJA
TJ
Ts
Value
3.0
1.5
60
- 55 to + 175
- 55 to + 175
Unit
W
V
K/W
°C
°C
Notes :
(1) TL = Lead temperature at 3/8 " (9.5mm) from body
(2) Valid provided that leads are kept at ambient temperature at a distance of 10 mm from case.
Fig. 1 Power Temperature Derating Curve
5
L = LEAD LENGTH
4
L = 1/8"
TO HEAT SINK
3 L = 3/8"
2
L = 1"
1
0
0 40 80 120 160 200
TL, LEAD TEMPERATURE (°C)
Page 1 of 3
Rev. 04 : November5, 2007

1 page





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