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PDF BD180 Data sheet ( Hoja de datos )
| Número de pieza | BD180 | |
| Descripción | EPITAXIAL SILICON POWER TRANSISTORS | |
| Fabricantes | CDIL | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BD180 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
EPITAXIAL SILICON POWER TRANSISTORS
BD175
BD177
BD179
NPN
BD176
BD178
BD180
PNP
ECB
Intended for use in Medium Power Linear Switching Applications
TO126
Plastic Package
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector -Emitter Voltage
Collector -Base Voltage
Emitter Base Voltage
Collector Current
Collector Peak Current
Power Dissipation @ Ta=25ºC
Derate above 25ºC
Power Dissipation @ Tc=25ºC
Operating and Storage Junction
Temperature Range
SYMBOL
VCEO
VCBO
VEBO
IC
ICM
PD
PD
Tj, Tstg
BD175
BD176
45
45
BD177
BD178
60
60
5.0
3.0
7.0
1.25
10
30
- 65 to +150
BD179
BD180
80
80
UNIT
V
V
V
A
A
W
mW/ºC
W
ºC
THERMAL CHARACTERISTICS
Junction to Ambient in free air
Junction to Case
Rth (j-a)
Rth (j-c)
ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
Collector Cut off Current
ICBO
VCB=45V, IE=0
VCB=60V, IE=0
Emitter Cut off Current
Collector Emitter Sustaining Voltage
IEBO
*VCEO (sus)
VCB=80V, IE=0
VEB=5V, IC=0
IC=100mA, IB=0
Collector Emitter Saturation Voltage
Base Emitter on Voltage
DC Current Gain
*VCE (sat)
*VBE (on)
*hFE
*hFE Group
IC=1A, IB=0.1A
IC=1A, VCE=2V
IC=150mA, VCE=2V
IC=1A, VCE=2V
IC=150mA, VCE=2V
Transition Frequency
fT
*Pulse test:- Pulse width=300µs, Duty cycle=1.5%
Only BD175/76/79
IC=250mA, VCE=10V
100
4.16
BD175/76
BD177/78
BD179/80
BD175/76
BD177/78
BD179/80
-6
- 10
- 16
MIN
45
60
80
40
15
40
63
100
3.0
ºC/W
ºC/W
MAX
100
100
100
1.0
0.8
1.3
UNIT
µA
µA
µA
mA
V
V
V
V
V
100
160
250
ΜΗz
Continental Device India Limited
Data Sheet
Page 1 of 3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet BD180.PDF ] | |
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