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PDF BD791 Data sheet ( Hoja de datos )
| Número de pieza | BD791 | |
| Descripción | NPN Silicon Power Transistor | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BD791 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BD791/D
NPN Plastic Silicon Power
Transistor
. . . designed for low power audio amplifier and low–current, high speed switching
applications.
• High Collector–Emitter Sustaining Voltage —
VCEO(sus) = 100 Vdc (Min)
• High DC Current Gain @ IC = 200 mAdc
hFE = 40–250
• Low Collector–Emitter Saturation Voltage —
VCE(sat) = 0.5 Vdc (Max) @ IC = 500 mAdc
• High Current Gain — Bandwidth Product —
fT = 40 MHz (Min) @ IC = 100 mAdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΗ Peak
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation @ TC = 25_C
Derate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTemperature Range
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case
Symbol
VCEO
VCB
VEBO
IC
IB
PD
TJ,Tstg
Symbol
RθJC
Max
100
100
6.0
4.0
8.0
1.0
15
0.12
– 65 to + 150
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/_C
_C
Max Unit
8.34 _C/W
16 1.6
12 1.2
8.0 0.8
4.0 0.4
0
20 40 60 80 100 120
T, TEMPERATURE (°C)
Figure 1. Power Derating
Preferred devices are Motorola recommended choices for future use and best overall value.
140
0
160
BD791
Motorola Preferred Device
4 AMPERE
POWER TRANSISTOR
SILICON
100 VOLTS
15 WATTS
CASE 77–09
TO–225AA TYPE
©MMoototorroollaa, IBncip. 1o9la98r Power Transistor Device Data
1
1 page  
PACKAGE DIMENSIONS
BD791
Q
H
–B–
U
F
123
–A–
M
K
C
VJ
GR
S 0.25 (0.010) M A M B M
D 2 PL
0.25 (0.010) M A M B M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES
DIM MIN MAX
A 0.425 0.435
B 0.295 0.305
C 0.095 0.105
D 0.020 0.026
F 0.115 0.130
G 0.094 BSC
H 0.050 0.095
J 0.015 0.025
K 0.575 0.655
M 5_ TYP
Q 0.148 0.158
R 0.045 0.065
S 0.025 0.035
U 0.145 0.155
V 0.040 –––
MILLIMETERS
MIN MAX
10.80 11.04
7.50 7.74
2.42 2.66
0.51 0.66
2.93 3.30
2.39 BSC
1.27 2.41
0.39 0.63
14.61 16.63
5_ TYP
3.76 4.01
1.15 1.65
0.64 0.88
3.69 3.93
1.02 –––
STYLE 1:
PIN 1.
2.
3.
EMITTER
COLLECTOR
BASE
CASE 77–09
TO–225AA TYPE
ISSUE W
Motorola Bipolar Power Transistor Device Data
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet BD791.PDF ] | |
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