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PDF 2SCR542D Data sheet ( Hoja de datos )
| Número de pieza | 2SCR542D | |
| Descripción | Midium Power Transistors | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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Midium Power Transistors (30V / 5A)
2SCR542D
Structure
NPN Silicon epitaxial planar transistor
Features
1) Low saturation voltage
VCE (sat) = 0.4V (Max.) (IC / IB= 2A / 100mA)
2) High speed switching
Applications
Driver
Dimensions (Unit : mm)
CPT3
(SC-63)
<SOT-428>
(1) Base
(2) Collector
(3) Emitter
Packaging specifications
Type
Package
Code
Basic ordering unit (pieces)
CPT3
TL
2500
Inner circuit (Unit : mm)
(2)
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol Limits
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current DC
Pulsed
Power dissipation
Junction temperature
Range of storage temperature
VCBO
VCEO
VEBO
IC
ICP *1
PD *2
PD *3
Tj
Tstg
30
30
6
5
10
1
10
150
-55 to 150
*1 Pw=10ms, Single Pulse
*2 Mounted on a substrate
*3 TC=25°C
Unit
V
V
V
A
A
W
W
°C
°C
(1) Base
(2) Collector
(3) Emitter
(1)
(3)
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
1/5
2010.12 - Rev.A
1 page  
2SCR542D
Switching time test circuit
VIN IB1
IB2
Pw ~_50μs
Pw DUTY CYCLE≦1%
Data Sheet
RL=3.9Ω
IC
VCC~_ 10V
BASE CURENT WAVEFORM
COLLECTOR CURRENT WAVEFORM
90%
ton
10%
tstg tf
I B1
I B2
IC
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
5/5
2010.12 - Rev.A
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 2SCR542D.PDF ] | |
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