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PDF 2SCR552P Data sheet ( Hoja de datos )
| Número de pieza | 2SCR552P | |
| Descripción | NPN 3.0A 30V Middle Power Transistor | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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2SCR552P
NPN 3.0A 30V Middle Power Transistor
Datasheet
Parameter
VCEO
IC
Value
30V
3.0A
lFeatures
1) Suitable for Middle Power Driver
2) Complementary PNP Types : 2SAR552P
3) Low VCE(sat)
VCE(sat)=0.40V(Max.)
(IC/IB=1A/50mA)
4) Lead Free/RoHS Compliant.
lOutline
MPT3
Base
Collector
Emitter
2SCR552P
(SC-62)
<SOT-89>
lInner circuit
Collector
Base
Emitter
lPackaging specifications
Part No.
Package
2SCR552P
MPT3
Package
size
(mm)
4540
lApplications
Motor driver , LED driver
Power supply
Taping
code
T100
Reel size
(mm)
Tape width
(mm)
Basic
ordering
unit (pcs)
180 12 1,000
Marking
NF
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulsed
Power dissipation
Junction temperature
Range of storage temperature
*1 Pw=10ms , single pulse
*2 Each terminal mounted on a reference land
*3 Mounted on a ceramic board (40×40×0.7mm)
Symbol
VCBO
VCEO
VEBO
IC
ICP *1
PD *2
PD *3
Tj
Tstg
Values
30
30
6
3.0
6.0
0.5
2.0
150
-55 to +150
Unit
V
V
V
A
A
W
W
°C
°C
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
1/6
2013.05 - Rev.B
1 page  
2SCR552P
lElectrical characteristic curves(Ta = 25°C)
Fig.9 Emitter input capacitance vs.
Emitter-Base Voltage
Collector output capacitance vs.
Collector-Base Voltage
1000
Ta=25ºC
f=1MHz
Cib
IE=0A
IC=0A
100
Cob
10
1
0.1 1 10 100
COLLECTOR - BASE VOLTAGE : VCB [V]
EMITTER - BASE VOLTAGE : VEB [V]
Data Sheet
Fig.10 Safe Operating Area
10
1
1ms
10ms
100ms
DC
(Mounted on a
0.1 ceramic board)
DC
(Mounted on a
reference land)
Ta=25ºC
Single non repetitive pulse
0.01
0.1 1 10
100
COLLECTOR TO EMITTER VOLTAGE : VCE [V]
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
5/6
2013.05 - Rev.B
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet 2SCR552P.PDF ] | |
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