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PDF 2SCR533D Data sheet ( Hoja de datos )
| Número de pieza | 2SCR533D | |
| Descripción | NPN 3.0A 50V Middle Power Transistor | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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2SCR533P / 2SCR533D
NPN 3.0A 50V Middle Power Transistor
Datasheet
Parameter
VCEO
IC
Value
50V
3.0A
lOutline
MPT3
Base
Collector
Emitter
lFeatures
1) Suitable for Middle Power Driver
2) Complementary PNP Types : 2SAR533P / 2SAR533D
3) Low VCE(sat)
VCE(sat)=0.35V Max. (IC/IB=1A/50mA)
4) Lead Free/RoHS Compliant.
2SCR533P
(SC-62)
<SOT-89>
CPT3
Collector
Base
Emitter
2SCR533D
(SC-63)
<SOT-428>
lInner circuit Collector
Base
lApplications
Motor driver , LED driver
Power supply
Emitter
lPackaging specifications
Part No.
Package
2SCR533P
2SCR533D
MPT3
CPT3
Package
size
(mm)
4540
6595
Taping
code
T100
TL
Reel size
(mm)
Tape width
(mm)
Basic
ordering
unit (pcs)
180 12 1,000
330 16 2,500
Marking
NM
CR533
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Values
Collector-base voltage
VCBO
50
Collector-emitter voltage
VCEO
50
Emitter-base voltage
VEBO
6
Collector current
Power dissipation
DC
Pulsed
2SCR533P
2SCR533D
IC
ICP *1
PD
3.0
6.0
0.5 *2
2.0 *3
1.0 *4
10 *5
Junction temperature
Tj 150
Range of storage temperature
Tstg -55 to +150
*1 Pw=10ms , single pulse *2 Each terminal mounted on a reference land
*3 Mounted on a ceramic board (40×40×0.7mm) *4 Mounted on a substrate *5 TC=25°C
Unit
V
V
V
A
A
W
W
W
W
°C
°C
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
1/7
2013.05 - Rev.B
1 page  
2SCR533P / 2SCR533D
lElectrical characteristic curves(Ta = 25°C)
Fig.9 Emitter input capacitance vs.
Emitter-Base Voltage
Collector output capacitance vs.
Collector-Base Voltage
1000
Ta=25ºC
f=1MHz
Cib
IE=0A
IC=0A
100
Cob
10
1
0.1 1 10 100
COLLECTOR - BASE VOLTAGE : VCB [V]
EMITTER - BASE VOLTAGE : VEB [V]
Data Sheet
Fig.10 Safe Operating Area
10
1ms
10ms
100ms
1
DC
(Mounted on a
ceramic board)
DC
0.1 (Mounted on a
reference land)
Ta=25ºC
Single non repetitive pulse
2SCR533P
0.01
0.1 1
10
100
COLLECTOR TO EMITTER VOLTAGE : VCE [V]
Fig.11 Safe Operating Area
10
1
1ms
10ms
DC
0.1 DC Ta=25ºC
(Mounted on a substrate)
2SCR533D
0.01
0.1 1
Tc=25ºC
Single non
repetitive pulse
10
100
COLLECTOR TO EMITTER VOLTAGE : VCE [V]
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
5/7
2013.05 - Rev.B
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 2SCR533D.PDF ] | |
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