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PDF 2N4395 Data sheet ( Hoja de datos )
| Número de pieza | 2N4395 | |
| Descripción | Silicon NPN Power Transistor | |
| Fabricantes | Inchange Semiconductor | |
| Logotipo |  |
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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2N4395
DESCRIPTION
·Excellent Safe Operating Area
·Low Collector-Emitter Saturation Voltage
·The device employs the popular JEDEC TO-3
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation.
APPLICATIONS
·High voltage high current power transistors
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Collector-Base Voltage
60 V
Collector-Emitter Voltage
40 V
Emitter-Base Voltage
4V
Collector Current-Continuous
5A
Collector Power Dissipation@TC=25℃
62
Junction Temperature
150
W
℃
Storage Temperature
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
2 ℃/W
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2N4395.PDF ] | |
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