2N6235 Datasheet PDF - Inchange Semiconductor
| Part Number | 2N6235 | |
| Description | Silicon NPN Power Transistor | |
| Manufacturers | Inchange Semiconductor | |
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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2N6235
DESCRIPTION
·High Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 325V(Min)
·DC Current Gain-
: hFE = 25-125@ IC= 1A
·Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.5V(Max)@ IC = 1A
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed f for high-voltage medium power and switching
reguators applications .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
350 V
VCEO
Collector-Emitter Voltage
325 V
VEBO
Emitter-Base Voltage
6V
IC Collector Current-Continuous
5A
ICM Collector Current-Peak
10 A
IB Base Current
2A
PC Collector Power Dissipation@TC=25℃ 50
W
TJ Junction Temperature
200 ℃
Tstg Storage Temperature
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
3.5 ℃/W
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for 2N6235 electronic component. |
| Information | Total 2 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ 2N6235.PDF Datasheet ] | |
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