Datasheet.kr   

74AHC2G126-Q100 데이터시트 PDF




NXP Semiconductors에서 제조한 전자 부품 74AHC2G126-Q100은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

PDF 형식의 74AHC2G126-Q100 자료 제공

부품번호 74AHC2G126-Q100 기능
기능 Dual buffer/line driver
제조업체 NXP Semiconductors
로고 NXP Semiconductors 로고


74AHC2G126-Q100 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 15 페이지수

미리보기를 사용할 수 없습니다

74AHC2G126-Q100 데이터시트, 핀배열, 회로
74AHC2G126-Q100;
74AHCT2G126-Q100
Dual buffer/line driver; 3-state
Rev. 1 — 11 March 2014
Product data sheet
1. General description
The 74AHC2G126-Q100 and 74AHCT2G126-Q100 are high-speed Si-gate CMOS
devices. They provide a dual non-inverting buffer/line driver with 3-state output. The
3-state output is controlled by the output enable input (nOE). A LOW at nOE causes the
output to assume a high-impedance OFF-state.
The AHC device has CMOS input switching levels and supply voltage range 2 V to 5.5 V.
The AHCT device has TTL input switching levels and supply voltage range 4.5 V to 5.5 V.
This product has been qualified to the Automotive Electronics Council (AEC) standard
Q100 (Grade 1) and is suitable for use in automotive applications.
2. Features and benefits
Automotive product qualification in accordance with AEC-Q100 (Grade 1)
Specified from 40 C to +85 C and from 40 C to +125 C
Symmetrical output impedance
High noise immunity
Low power dissipation
Balanced propagation delays
Multiple package options
ESD protection:
MIL-STD-883, method 3015 exceeds 2000 V
HBM JESD22-A114F exceeds 2000 V
MM JESD22-A115-A exceeds 200 V (C = 200 pf, R = 0 )




74AHC2G126-Q100 pdf, 반도체, 판매, 대치품
NXP Semiconductors 74AHC2G126-Q100; 74AHCT2G126-Q100
Dual buffer/line driver; 3-state
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
Min Max Unit
VCC supply voltage
VI input voltage
IIK
input clamping current
VI < 0.5 V
IOK
output clamping current
VO < 0.5 V or VO > VCC + 0.5 V
IO output current
0.5 V < VO < VCC + 0.5 V
0.5
0.5
[1] 20
[1] -
-
+7.0
+7.0
-
20
25
V
V
mA
mA
mA
ICC
IGND
Tstg
Ptot
supply current
ground current
storage temperature
total power dissipation
Tamb = 40 C to +125 C
-
75
65
[2] -
75
-
+150
250
mA
mA
C
mW
[1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2] For TSSOP8 package: above 55 C the value of Ptot derates linearly with 2.5 mW/K.
For VSSOP8 package: above 110 C the value of Ptot derates linearly with 8 mW/K.
9. Recommended operating conditions
Table 6. Recommended operating conditions
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
VCC
VI
VO
Tamb
t/V
supply voltage
input voltage
output voltage
ambient temperature
input transition rise
and fall rate
VCC = 3.3 V 0.3 V
VCC = 5.0 V 0.5 V
74AHC2G126-Q100
Min Typ Max
2.0 5.0 5.5
0 - 5.5
0 - VCC
40 +25 +125
- - 100
- - 20
74AHCT2G126-Q100
Min Typ Max
4.5 5.0 5.5
0 - 5.5
0 - VCC
40 +25 +125
---
- - 20
Unit
V
V
V
C
ns/V
ns/V
74AHC_AHCT2G126_Q100
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 11 March 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
4 of 15

4페이지










74AHC2G126-Q100 전자부품, 판매, 대치품
NXP Semiconductors 74AHC2G126-Q100; 74AHCT2G126-Q100
Dual buffer/line driver; 3-state
Table 8. Dynamic characteristics …continued
GND = 0 V; for test circuit see Figure 7.
Symbol Parameter Conditions
CPD power
dissipation
capacitance
74AHCT2G126-Q100
per buffer;
CL = 50 pF; fi = 1 MHz;
VI = GND to VCC
tpd propagation nA to nY; see Figure 5
delay
VCC = 4.5 V to 5.5 V
CL = 15 pF
CL = 50 pF
ten enable time nOE to nY; see Figure 6
VCC = 4.5 V to 5.5 V
CL = 15 pF
CL = 50 pF
tdis disable time nOE to nY; see Figure 6
VCC = 4.5 V to 5.5 V
CL = 15 pF
CL = 50 pF
CPD power
per buffer;
dissipation CL = 50 pF; fi = 1 MHz;
capacitance VI = GND to VCC
25 C
40 C to +85 C 40 C to +125 C Unit
Min Typ Max Min Max Min Max
[4] - 10 -
-
-
-
- pF
[1]
[3]
- 3.4 5.5 1.0
6.5
1.0
7.0 ns
- 4.8 7.5 1.0
8.5
1.0
9.5 ns
[1]
[3]
- 3.9 5.1 1.0
6.0
1.0
6.5 ns
- 5.1 7.5 1.0
9.0
1.0
9.5 ns
[1]
[3]
- 4.5 6.8 1.0
8.0
1.0
8.5 ns
- 6.1 8.8 1.0 10.0 1.0
11.0 ns
[4] - 10 -
-
-
-
- pF
[1] tpd is the same as tPLH and tPHL.
ten is the same as tPZL and tPZH.
tdis is the same as tPLZ and tPHZ.
[2] Typical values are measured at VCC = 3.3 V.
[3] Typical values are measured at VCC = 5.0 V.
[4] CPD is used to determine the dynamic power dissipation PD (W).
PD = CPD VCC2 fi + (CL VCC2 fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in Volt.
74AHC_AHCT2G126_Q100
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 11 March 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
7 of 15

7페이지


구       성 총 15 페이지수
다운로드[ 74AHC2G126-Q100.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
74AHC2G126-Q100

Dual buffer/line driver

NXP Semiconductors
NXP Semiconductors

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵