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2P4M PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 2P4M
기능 2.0 Ampere Passivated Process Thyristor
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2P4M 데이터시트, 핀배열, 회로
2P4M
®
2P4M
Pb Free Plating Product
Pb
2.0 Ampere Passivated Process Thyristor---Sensitive Gate SCR
DESCRIPTION:
ThinkiSemi 2P4M SCR with the parallel resistor
between Gate and Cathode are especially
recommended for use on straight hair, igniter,
anion generator etc..
MAIN FEATURES
TO-202 Pkg Outline
Symbol
Value
IT(RMS)
IGT
VTM
2
200
1.5
ABSOLUTE MAXIMUM RATINGS
Unit
A
μA
V
Internal structure
A(2)
K(1)
RGK
G(3)
3
2
1
Parameter
Storage junction temperature range
Operating junction temperature range
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Symbol
Tstg
Tj
VDRM
VRRM
Value
-40-150
-40-110
600
600
Unit
V
V
RMS on-state current
@ (TC=72) IT(RMS)
2
A
Non repetitive surge peak on-state current
(tp=10ms)
I2t value for fusing (tp=10ms)
Critical rate of rise of on-state current
Peak gate current (tp=20μs, Tj=110)
Peak gate power (tp=20μs, Tj=110)
Average gate power dissipation(Tj=110)
ITSM
I2t
dI/dt
IGM
PGM
PG(AV)
20 A
2 A2s
50 As
0.2 A
0.5 W
0.1 W
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 1/3
http://www.thinkisemi.com/






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부품번호상세설명 및 기능제조사
2P4M

2.0 Ampere Passivated Process Thyristor

Thinki Semiconductor
Thinki Semiconductor
2P4M

Triacs sensitive gate

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