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PDF BT136-600D Data sheet ( Hoja de datos )
| Número de pieza | BT136-600D | |
| Descripción | Triacs | |
| Fabricantes | Inchange Semiconductor | |
| Logotipo |  |
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INCHANGE Semiconductor
Isc Triacs
isc Product Specification
BT136-600D
FEATURES
·With TO-220 package
·.Glass passivated triacs in a plastic
envelope, Intended for use in general
purpose bidirectional switching and
phase control applications, where
high sensitivity is required in all four
quadrants.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDRM Repetitive peak off-state voltage
VRRM Repetitive peak off-state voltage
IT(RMS) RMS on-state current (full sine wave)
ITSM Non-repetitive peak on-state current
PGM Peak gate power dissipation
PG(AV) Average gate power dissipation
Tj Operating junction temperature
Tstg Storage temperature
MIN
600
600
4
25
5
0.5
125
-45~150
UNIT
V
V
A
A
W
W
℃
℃
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
IRRM
IDRM
Repetitive peak reverse current
Repetitive peak off-state current
VR=VRRM,
VR=VRRM, Tj=125℃
VD=VDRM,
VD=VDRM, Tj=125℃
Ⅰ
IGT Gate trigger current
Ⅱ
VD=12V; IT= 0.1A, RL= 30Ω
Ⅲ
Ⅳ
VTM On-state voltage
IH Holding current
VGT Gate trigger voltage
IT= 5A
IGT= 0.1A, VD= 12V
VD=12V; RL= 30Ω all quadrant
MIN MAX UNIT
0.01
0.5
mA
0.01
0.5
mA
5
5
mA
5
10
1.7 V
15 mA
1.5 V
isc website： www.iscsemi.com
isc & iscsemi is registered trademark
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