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PDF IHW25N120E1 Data sheet ( Hoja de datos )
| Número de pieza | IHW25N120E1 | |
| Descripción | IGBT | |
| Fabricantes | Infineon | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IHW25N120E1 (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
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ResonantSoft-SwitchingSeries
ReverseconductingIGBTwithmonolithicbodyDiodeforsoft-switching
IHW25N120E1
Datasheet
IndustrialPowerControl
1 page  
IHW25N120E1
ResonantSoft-SwitchingSeries
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES
Collector-emitter saturation voltage VCEsat
Diode forward voltage
VF
Gate-emitter threshold voltage
VGE(th)
Zero gate voltage collector current ICES
Gate-emitter leakage current
Transconductance
Integrated gate resistor
IGES
gfs
rG
VGE=0V,IC=0.50mA
VGE=15.0V,IC=25.0A
Tvj=25°C
Tvj=100°C
Tvj=150°C
VGE=0V,IF=25.0A
Tvj=25°C
Tvj=100°C
Tvj=150°C
IC=0.80mA,VCE=VGE
VCE=1200V,VGE=0V
Tvj=25°C
Tvj=150°C
VCE=0V,VGE=20V
VCE=20V,IC=25.0A
min.
Value
typ.
max. Unit
1200 -
-V
-
-
1.50 2.00
1.65 -
V
- 1.75 -
-
-
1.90 2.50
2.15 -
V
- 2.35 -
4.0 5.8 8.0 V
- - 100 µA
- 500 -
- - 100 nA
- 23.0 - S
8.5 Ω
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
DynamicCharacteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from
case
Symbol Conditions
Cies
Coes VCE=25V,VGE=0V,f=1MHz
Cres
QG
VCC=960V,IC=25.0A,
VGE=15V
LE
min.
Value
typ.
max. Unit
- 1300 -
- 37 - pF
- 31 -
- 147.0 - nC
- 13.0 - nH
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
IGBTCharacteristic,atTvj=25°C
Turn-off delay time
Fall time
td(off)
tf
Turn-off energy, soft switching
Eoff
Tvj=25°C,
VCC=105V,IC=25.0A,
VGE=0.0/18.0V,
RG(off)=10.2Ω
Energy losses include “tail”
according Figure B. (Test circuit
FigureE,Cr=300nF).
dv/dt=83.0V/µs
Value
min. typ. max. Unit
- 229 - ns
- 1020 - ns
- 0.08 - mJ
5 Rev.2.1,2016-07-29
5 Page 
ResonantSoft-SwitchingSeries
IHW25N120E1
75
Tvj=25°C
Tvj=150°C
3.5
IF=12.5A
IF=25A
3.0 IF=50A
2.5
50
2.0
1.5
25
1.0
0.5
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VF,FORWARDVOLTAGE[V]
Figure 17. Typicaldiodeforwardcurrentasafunction
offorwardvoltage
0.0
25
50 75 100 125
Tvj,JUNCTIONTEMPERATURE[°C]
150
Figure 18. Typicaldiodeforwardvoltageasafunction
ofjunctiontemperature
11 Rev.2.1,2016-07-29
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet IHW25N120E1.PDF ] | |
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