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부품번호 | IPU80R1K4P7 기능 |
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기능 | MOSFET ( Transistor ) | ||
제조업체 | Infineon | ||
로고 | |||
전체 13 페이지수
IPU80R1K4P7
MOSFET
800VCoolMOSªP7PowerTransistor
Thelatest800VCoolMOS™P7seriessetsanewbenchmarkin800V
superjunctiontechnologiesandcombinesbest-in-classperformancewith
stateoftheartease-of-use,resultingfromInfineon’sover18years
pioneeringsuperjunctiontechnologyinnovation.
Features
•Best-in-classFOMRDS(on)*Eoss;reducedQg,Ciss,andCoss
•Best-in-classDPAKRDS(on)
•Best-in-classV(GS)thof3VandsmallestV(GS)thvariationof±0.5V
•IntegratedZenerDiodeESDprotection
•Best-in-classCoolMOS™qualityandreliability;qualifiedforindustrial
gradeapplicationsaccordingtoJEDEC(J-STD20andJESD22)
•Fullyoptimizedportfolio
Benefits
•Best-in-classperformance
•Enablinghigherpowerdensitydesigns,BOMsavingsandlower
assemblycosts
•Easytodriveandtoparallel
•BetterproductionyieldbyreducingESDrelatedfailures
•Lessproductionissuesandreducedfieldreturns
•Easytoselectrightpartsforfinetuningofdesigns
Applications
RecommendedforhardandsoftswitchingflybacktopologiesforLED
Lighting,lowpowerChargersandAdapters,Audio,AUXpowerand
Industrialpower.AlsosuitableforPFCstageinConsumerapplications
andSolar.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseperatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj=25°C
RDS(on),max
Qg,typ
ID
800
1.4
10
4
V
Ω
nC
A
Eoss @ 500V
0.9
µJ
VGS(th),typ
3
V
ESD class (HBM) 2
-
Type/OrderingCode
IPU80R1K4P7
Package
PG-TO 251
Marking
80R1K4P7
IPAK
tab
12 3
Drain
Pin 2, Tab
Gate
Pin 1
Source
Pin 3
RelatedLinks
see Appendix A
Final Data Sheet
1 Rev.2.0,2016-07-05
800VCoolMOSªP7PowerTransistor
IPU80R1K4P7
3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V(BR)DSS
VGS(th)
IDSS
Gate-source leakage curent incl. zener
diode
IGSS
Drain-source on-state resistance
Gate resistance
RDS(on)
RG
Min.
800
2.5
-
-
-
-
-
-
Values
Typ. Max.
--
3 3.5
-1
10 -
-1
1.2 1.4
3.1 -
1.5 -
Unit Note/TestCondition
V VGS=0V,ID=1mA
V VDS=VGS,ID=0.07mA
µA
VDS=800V,VGS=0V,Tj=25°C
VDS=800V,VGS=0V,Tj=150°C
µA VGS=20V,VDS=0V
Ω
VGS=10V,ID=1.4A,Tj=25°C
VGS=10V,ID=1.4A,Tj=150°C
Ω f=250kHz,opendrain
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance
Output capacitance
Effective output capacitance, energy
related1)
Effective output capacitance, time
related2)
Turn-on delay time
Ciss
Coss
Co(er)
Co(tr)
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Min.
-
-
-
Values
Typ. Max.
250 -
6.5 -
8-
Unit Note/TestCondition
pF VGS=0V,VDS=500V,f=250kHz
pF VGS=0V,VDS=500V,f=250kHz
pF VGS=0V,VDS=0to500V
- 97 - pF ID=constant,VGS=0V,VDS=0to500V
-
10 -
ns
VDD=400V,VGS=13V,ID=1.4A,
RG=22Ω
-
8-
ns
VDD=400V,VGS=13V,ID=1.4A,
RG=22Ω
-
40 -
ns
VDD=400V,VGS=13V,ID=1.4A,
RG=22Ω
-
20 -
ns
VDD=400V,VGS=13V,ID=1.4A,
RG=22Ω
Table6Gatechargecharacteristics
Parameter
Symbol
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Qgs
Qgd
Qg
Vplateau
Min.
-
-
-
-
Values
Typ. Max.
1-
5-
10 -
4.5 -
Unit Note/TestCondition
nC VDD=640V,ID=1.4A,VGS=0to10V
nC VDD=640V,ID=1.4A,VGS=0to10V
nC VDD=640V,ID=1.4A,VGS=0to10V
V VDD=640V,ID=1.4A,VGS=0to10V
1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to500V
2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to500V
Final Data Sheet
4
Rev.2.0,2016-07-05
4페이지 800VCoolMOSªP7PowerTransistor
IPU80R1K4P7
Diagram5:Typ.outputcharacteristics
12
10
8
6
4
2
0
0 5 10
VDS[V]
ID=f(VDS);Tj=25°C;parameter:VGS
20 V 10 V
8V
7V
Diagram6:Typ.outputcharacteristics
7
6
6V 5
5.5 V
5V
4
3
2
4.5 V
1
0
15 20 0
5 10
VDS[V]
ID=f(VDS);Tj=125°C;parameter:VGS
20 V
10 V
8V
7V
6V
5.5 V
5V
4.5 V
15 20
Diagram7:Typ.drain-sourceon-stateresistance
5 V 5.5 V 6 V 6.5 V
6.4 7 V
10 V
5.4
4.4
3.4
2.4
Diagram8:Drain-sourceon-stateresistance
3.1
2.6
2.1 98%
1.6 typ
1.1
0.6
1.4
024
ID[A]
RDS(on)=f(ID);Tj=125°C;parameter:VGS
6
0.1
8 10
-50 -25 0 25 50 75 100 125 150
Tj[°C]
RDS(on)=f(Tj);ID=1.4A;VGS=10V
Final Data Sheet
7 Rev.2.0,2016-07-05
7페이지 | |||
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부품번호 | 상세설명 및 기능 | 제조사 |
IPU80R1K4P7 | MOSFET ( Transistor ) | Infineon |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |