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ADPD2211 데이터시트 PDF




Analog Devices에서 제조한 전자 부품 ADPD2211은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 ADPD2211 기능
기능 High Sensitivity Optical Sensor
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ADPD2211 데이터시트, 핀배열, 회로
Data Sheet
Low Noise, High Sensitivity Optical Sensor
ADPD2211
FEATURES
Ultrahigh detectivity photodetector
90 fA/√Hz (typical) ultralow noise floor
Signal-to-noise ratio (SNR) near shot noise limit
137 µA (typical) of supply current when active
(EE = 0 µW/cm2)
1 µA (typical) of supply current in standby
High speed, deep junction photodiode
Nominal linear output current: 240 µA (typical)
Flexible output configuration
Excellent pulse response
High ambient light rejection
Space-saving, 3 mm × 3 mm LFCSP package
APPLICATIONS
Heart rate, pulse oximetry monitoring
(photoplethysmography)
Battery-powered medical sensors
Chemical analysis
FUNCTIONAL BLOCK DIAGRAM
VCC
+
CURRENT
AMPLIFIER
ADPD2211
OUT
PWDN GND
Figure 1.
GENERAL DESCRIPTION
The ADPD2211 is an optical sensor optimized for biomedical
applications. Very low power consumption and near theoretical
signal-to-noise ratio (SNR) are achieved by packaging an ultralow
capacitance deep junction silicon photodiode operated in zero
bias photoconductive mode with a low noise current amplifier.
The ADPD2211 offers a typical 400 kHz bandwidth performance,
which is well suited for use with pulsed excitation. The ADPD2211
uses very little power during operation and incorporates a
power-down pin, enabling power cycling to optimize battery
life in portable applications. The ADPD2211 provides shot
noise limited performance, making it an excellent choice for
measuring signals with the highest possible fidelity in low light
conditions. This combination of low power, very high SNR, and
electromagnetic interference (EMI) immunity enables low power
system solutions not possible with traditional photodiode (PD)
and transimpedance amplifier (TIA) systems.
Rev. 0
Document Feedback
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarksandregisteredtrademarksarethepropertyoftheirrespectiveowners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
©2016 Analog Devices, Inc. All rights reserved.
Technical Support
www.analog.com




ADPD2211 pdf, 반도체, 판매, 대치품
Data Sheet
ADPD2211
SPECIFICATIONS
VCC = 3.3 V, TA = 25°C, λ = 528 nm, unless otherwise noted. IPD is the photodiode current, IMOD is the modulation current, EE is
irradiance, IOUT is output current, VBIAS is the bias voltage, RFEEDBACK is the TIA feedback resistor, and RLOAD is the load resistance.
Table 1.
Parameter
GAIN
Gain (Current Amplifier)
DYNAMIC PERFORMANCE
Frequency Response Peaking
Rise Time
Fall Time
Bandwidth
OPTICAL PERFORMANCE
Diode Active Area
Saturation Irradiance
NOISE PERFORMANCE
Current Noise, Output Referred1
Current Noise Floor, Input Referred
Noise Equivalent Power
EE Required for SNR = 10000:1
POWER AND SUPPLY
Supply Voltage
Power Supply Rejection Ratio
Current
Standby
Supply at EE = 0 µW/cm2
Supply2
OUTPUT CHARACTERISTICS
Amplifier Static Bias Current
Input Referred
Output Referred
Maximum Output Voltage
Nominal Linear Output Current
Linearity into TIA
Linearity into Resistive Load
Peak Output Current3
Output Capacitance
Output Resistance
POWER-DOWN LOGIC
Input Voltage
High Level
Low Level
Leakage Current
High
Low
OPERATING AMBIENT TEMPERATURE RANGE
Symbol
βTLA
tR
tF
BW
NEP
VCC
PSRR
ISTANDBY
IFLOOR
ISUPPLY
VOUT_MAX
IOUT_FS
COUT
ROUT
VIH
VIL
IIH
IIL
Test Conditions/Comments
10% to 90% full scale (FS) (IOUT = 24 µA)
90% to 10% FS (IOUT =24 µA)
IPD = 10 nA, IMOD = 1 nA
EE = 0 µW/cm2
IPD = 10 nA to 300 nA
IPD > 300 nA
EE = 0 µW/cm2, at 1 kHz
At 1 kHz
At 1 kHz
VCC = 1.8 V to 5.0 V, EE = 2200 µW/cm2
PWDN > VIH
IOUT = 10 µA
IOUT = 240 µA
EE = 0 µW/cm2
EE = 0 µW/cm2
VBIAS = 1.3 V, RFEEDBACK = 25 kΩ
IOUT < 100 µA , RLOAD = 5 kΩ
From OUT to GND
From OUT to GND
PWDN = 3.3 V
PWDN = 0 V
Min
1.8
VCC − 0.2
−40
Typ
24
<6
1.24
1.27
400
1.8
2200
1920
1.4 × NSHOT
1.15 × NSHOT
90
100
200
3.3
120
1
137
166
950
10
240
VCC − 0.75
240
60
60
300
5
1000
0.2
−8.5
Max
150
5.0
0.2
+85
Unit
dB
µs
µs
kHz
mm2
µW/cm2
fA/√Hz
fA/√Hz
fA/√Hz
fA/√Hz
fW/√Hz
nW/cm2
V
nA/V
µA
µA
µA
µA
nA
nA
V
µA
dB
dB
µA
pF
V
V
nA
µA
°C
1 NSHOT refers to photon shot noise. Photon shot noise is the fundamental noise floor for all photodetectors in photoconductive mode.
2 ISUPPLY = IFLOOR + (3.3 × IOUT).
3 Outputs greater than IOUT_FS may have degraded performance.
Rev. 0 | Page 3 of 13

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ADPD2211 전자부품, 판매, 대치품
ADPD2211
TYPICAL PERFORMANCE CHARACTERISTICS
–10°
–20°
–30°
1.0 –40°
–50°
0.8
HORIZONTAL
VERTICAL
–60°
–70°
–80°
0.6 0.4 0.2 0 0.2 0.4 0.6
Figure 4. Relative Radiant Sensitivity vs. Angular Displacement
12
10
8
6
4
2
0
WAVELENGTH (λ)
Figure 5. Responsivity vs. Wavelength
1µs
10µs
PWDN
–10 10
30
TIME (µs)
50
Figure 6. Power-Down Recovery Time, 1%
Data Sheet
1.8m
1.6m
1.4m
VCC = 1.8V
VCC = 2.5V
VCC = 3.3V
VCC = 5V
1.2m
1.0m
800µ
600µ
400µ
200µ
0
0 50 100 150 200 250 300 350 400 450
IOUT (µA)
Figure 7. Supply Current vs. Output Current (IOUT) over Supply Voltage (VCC)
1µA
100nA
0 20 40 60 80
TIME (µs)
Figure 8. Small Signal Pulse Response
2
1µA
10µA
0
–2
–4
–6
–8
–10
–12
100
1k 10k 100k
FREQUENCY (Hz)
Figure 9. Bandwidth/Peaking
100
1M
Rev. 0 | Page 6 of 13

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