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MTB600N03N3 데이터시트 PDF




Cystech Electonics에서 제조한 전자 부품 MTB600N03N3은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 MTB600N03N3 자료 제공

부품번호 MTB600N03N3 기능
기능 30V N-CHANNEL Enhancement Mode MOSFET
제조업체 Cystech Electonics
로고 Cystech Electonics 로고


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MTB600N03N3 데이터시트, 핀배열, 회로
CYStech Electronics Corp.
Spec. No. : C954N3
Issued Date : 2014.06.24
Revised Date :
Page No. : 1/8
30V N-CHANNEL Enhancement Mode MOSFET
MTB600N03N3
BVDSS
ID@VGS=4.5V
RDSON@VGS=4.5V, ID=200mA
RDSON@VGS=2.5V, ID=100mA
30V
1.6A
448mΩ(typ.)
809mΩ(typ.)
Features
Low on-resistance
Excellent thermal and electrical capabilities
Compact and low profile SOT-23 package
ESD protected gate
• Pb-free lead plating and halogen-free package
Equivalent Circuit
MTB600N03N3
Outline
SOT-23
D
GGate
SSource
DDrain
GS
Ordering Information
Device
MTB600N03N3-0-T1-G
Package
SOT-23
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products
Product name
MTB600N03N3
CYStek Product Specification




MTB600N03N3 pdf, 반도체, 판매, 대치품
CYStech Electronics Corp.
Spec. No. : C954N3
Issued Date : 2014.06.24
Revised Date :
Page No. : 4/8
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
100
Threshold Voltage vs Junction Tempearture
1.4
1.2
Ciss
ID=1mA
1
Crss
10
0.8
ID=250μ A
C oss 0.6
1
0.1
1 10
VDS, Drain-Source Voltage(V)
100
Forward Transfer Admittance vs Drain Current
10
Pulsed
Ta=25°C
VDS=10V
1
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
VDS=15V
8 ID=1.6A
6
4
0.1
2
0.01
0.001
0.01 0.1
1
ID, Drain Current(A)
Maximum Safe Operating Area
10
100μ s
1ms
1
10ms
100ms
0.1
TA=25°C, Tj=150°C,VGS=4.5V
RθJA=90°C/W, Single Pulse
DC
0.01
0.01
0.1 1 10 100
VDS, Drain-Source Voltage(V)
10
1000
0
0123 45678
Qg, Total Gate Charge(nC)
Maximum Drain Current vs JunctionTemperature
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2 TA=25°C, VGS=4.5V
0
25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTB600N03N3
CYStek Product Specification

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MTB600N03N3 전자부품, 판매, 대치품
CYStech Electronics Corp.
Spec. No. : C954N3
Issued Date : 2014.06.24
Revised Date :
Page No. : 7/8
Recommended wave soldering condition
Product
Peak Temperature
Pb-free devices
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Sn-Pb eutectic Assembly
Pb-free Assembly
Average ramp-up rate
(Tsmax to Tp)
3°C/second max.
3°C/second max.
Preheat
Temperature Min(TS min)
100°C
150°C
Temperature Max(TS max)
Time(ts min to ts max)
150°C
60-120 seconds
200°C
60-180 seconds
Time maintained above:
Temperature (TL)
Time (tL)
183°C
60-150 seconds
217°C
60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
260 +0/-5 °C
Time within 5°C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6°C/second max.
6°C/second max.
Time 25 °C to peak temperature
6 minutes max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTB600N03N3
CYStek Product Specification

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부품번호상세설명 및 기능제조사
MTB600N03N3

30V N-CHANNEL Enhancement Mode MOSFET

Cystech Electonics
Cystech Electonics

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