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Número de pieza | PTVA035002EV | |
Descripción | Thermally-Enhanced High Power RF LDMOS FET | |
Fabricantes | Infineon | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de PTVA035002EV (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! PTVA035002EV
Thermally-Enhanced High Power RF LDMOS FET
500 W, 50 V, 390 – 450 MHz
Description
The PTVA035002EV LDMOS FET is designed for use in power ampli-
fier applications in the 390 MHz to 450 MHz frequency band. Features
include high gain and thermally-enhanced package with bolt-down
flange. Manufactured with Infineon's advanced LDMOS process, this
device provides excellent thermal performance and superior reliability.
PTVA035002EV
Package H-36275-4
Pulsed CW Performance
450 MHz, VD = 50 V, IDQ = 0.5 A,
12 µsec pulse width, 10% duty cycle
22 85
20
Gain
18
75
65
16 55
14
Efficiency
12
45
35
10
48
a035002 gr 1
25
50 52 54 56 58 60
Output Power (dBm)
Features
• Unmatched input and output
• High gain and efficiency
• Integrated ESD protection
• Human Body Model Class 2 (per ANSI/ESDA/
JEDEC JS-001)
• Low thermal resistance
• Pb-free and RoHS-compliant
• Capable of withstanding a 13:1 load
mismatch at 57 dBm under pulsed
conditions: 12 µsec pulse width, 10% duty cycle
RF Characteristics
Pulsed CW Class AB Characteristics (not subject to production test, verified by design/characterization in Infineon test fixture)
VDD = 50 V, IDQ = 0.5 A, POUT = 500 W, ƒ = 450 MHz, 12 µsec pulse width, 10% duty cycle
Characteristic
Gain
Drain Efficiency
Symbol
Gps
hD
Min
—
—
Typ
18
64
Max
—
—
Unit
dB
%
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 8
Rev. 05.2, 2016-06-08
1 page PTVA035002EV
Reference Circuit, 390 – 450 MHz
TMM10, .050 (63)
RF_IN
C104
C105 C102 VDD
R803
R801
S3 R807 R806
R802 C802
C801
R804
C803
S2
R805 SS11
C108 R107
S2
C206
3
C107
R101
R102
R104
R106
R105
R103
1
C208 C207
2
C109
R109
R110
R112
R114
R113
R111
4
5
C210 C212
6
C103
R108
C209
S1
PTVA035002_IN_03
C106 C101
Reference circuit assembly diagram (not to scale)*
Find Gerber files for this test fixture on the Infineon Web site at www.infineon.com/rfpower
C205
TMM10, .050 (63)
VDD
C211
C204
C203
VDD
C201
RF_OUT
C202
PTVA035002_OUT_03
ptva035002ev_CD_07-08-2013
Data Sheet
5 of 8
Rev. 05.2, 2016-06-08
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet PTVA035002EV.PDF ] |
Número de pieza | Descripción | Fabricantes |
PTVA035002EV | Thermally-Enhanced High Power RF LDMOS FET | Infineon |
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