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PDF PXAC260602FC Data sheet ( Hoja de datos )
| Número de pieza | PXAC260602FC | |
| Descripción | Thermally-Enhanced High Power RF LDMOS FET | |
| Fabricantes | Infineon | |
| Logotipo |  |
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PXAC260602FC
Thermally-Enhanced High Power RF LDMOS FET
60 W, P3dB @ 28 V, 2620 – 2690 MHz
Description
The PXAC260602FC is a 60-watt LDMOS FET with an asymmetrical
design intended for use in multi-standard cellular power amplifier
applications in the 2620 to 2690 MHz frequency band. Features
include dual-path design, high gain and thermally-enhanced package
with earless flanges. Manufactured with Infineon's advanced LDMOS
process, this device provides excellent thermal performance and
superior reliability.
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 85 mA, VGS = 2.62V,
ƒ = 2690 MHz, 3GPP WCDMA signal,
PAR = 8 dB, 10 MHz carrier spacing,
BW 3.84 MHz
17
Gain
16
60
50
15 40
14
Efficiency
13
30
20
12
pxac260602fc_g1
10
27 29 31 33 35 37 39 41 43 45 47
Output Power (dBm)
RF Characteristics
PXAC260602FC
Package H-37248-4
Features
• Main: Input matched
Peak: Input and output matching
• Asymmetric Doherty design
- Main: P1dB = 15 W Typ
- Peak: P1dB = 50 W Typ
• Typical Pulsed CW performance, 2690 MHz,
28 V, 10 µs pulse width, 10% duty cycle, class AB,
Doherty Configuration
- Output power at P1dB = 50 W
- Efficiency = 50%
- Gain = 15 dB
• Typical two-carrier WCDMA performance,
2690 MHz, 28 V, 8 dB PAR @ 0.01% CCDF,
Doherty Configuration
- Output power = 5 W
- Efficiency = 40%
- Gain = 15.7 dB
- IMD = –30 dBc
• Capable of handling 10:1 VSWR @28 V, 50 W
(CW) output power
• Integrated ESD protection : Human Body Model,
Class 1B (per JESD22-A114)
• Low thermal resistance
• Pb-free and RoHS compliant
Single-carrier WCDMA Specifications (tested in Infineon Doherty test fixture)
VDD = 28 V, IDQ = 85 mA, POUT = 5 W avg, VGS(PK) = VGS at 300 mA -1.0V, ƒ = 2620 – 2690 MHz, 3GPP signal, channel
bandwidth = 3.84 MHz, peak/average = 10 dB @ 0.01% CCDF
Characteristic
Symbol
Linear Gain
Drain Efficiency
Adjacent Channel Power Ratio
Gps
hD
ACPR
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 8
Min
14
35
—
Typ
15.7
39
–31
Max
—
—
–28
Unit
dB
%
dBc
Rev. 02.4, 2016-06-22
1 page  
Reference Circuit , 2620 – 2690 MHz
RO4350, .020
(61)
C104
VG1
C105
C103
R101
R102
RF_IN
VG2
C106
S1
C108
R104
R103
C107
C101
C102
PXAC260602FC_IN_02_D
Reference circuit assembly diagram (not to scale)
PXAC260602FC
PXAC260602FC_OUT_02_D (105)
C205
RO4350, .020
VDD
C202
C207
C201
C204
RF_OUT
C208
C206
C203
VDD
pxac260602fc_CD_11-27-2013
Data Sheet
5 of 8
Rev. 02.4, 2016-06-22
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet PXAC260602FC.PDF ] | |
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