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AH118 데이터시트 PDF




TriQuint에서 제조한 전자 부품 AH118은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 AH118 기능
기능 High Linearity InGaP HBT Amplifier
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AH118 데이터시트, 핀배열, 회로
AH118
¼ Watt, High Linearity InGaP HBT Amplifier
Applications
Final stage amplifiers for Repeaters
Mobile Infrastructure
Product Features
60 – 3500 MHz
+24.7 dBm PIdB
+40.5 dBm Output IP3
20.4 dB Gain @ 900 MHz
16.5 dB Gain @ 1900 MHz
+5V Single Positive Supply
Lead-free/Green/RoHS-compliant SOT-89 Package
General Description
The AH118 is a high dynamic range driver amplifier in a
low-cost surface mount package. The InGaP/GaAs HBT
is able to achieve high performance across a broad range
with +40.5 dBm OIP3 and +24.7 dBm of compressed 1dB
power. The AH118 is available in a lead-
free/green/RoHS-compliant SOT-89 package. All devices
are 100% RF and DC tested.
The AH118 is targeted for use as a driver amplifier in
wireless infrastructure where high linearity and medium
power is required. Internal biasing allows the AH118 to
maintain high linearity over temperature and operate
directly off a single +5V supply. This combination makes
the device an excellent candidate for transceiver line cards
in current and next generation multi-carrier 3G base
stations.
SOT-89 Package
Functional Block Diagram
GND
4
1
RF IN
2
GND
3
RF OUT
Pin Configuration
Pin #
1
2
3
4
Function
Input / Base
Ground
Output / Collector
Ground
Not Recommended for
New Designs
Recommended Replacement
Part: TQP7M9101
Data Sheet: Rev B 02/14/12
© 2012 TriQuint Semiconductor, Inc.
Ordering Information
Part No.
AH118-89G
Description
High IP3 InGaP HBT Amp
Standard T/R size = 1000 pieces on a 7” reel.
- 1 of 14 -
Disclaimer: Subject to change without notice
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AH118 pdf, 반도체, 판매, 대치품
AH118
¼ Watt, High Linearity InGaP HBT Amplifier
Reference Design 920-960 MHz (AH118-89PCB900)
Vcc = +5 V
D1
C1
C3
C2
U1
C4 L2 R2
L3
C5
DIODE1
5.6 V
ID=C4
C=56 pF
ID=L2
R=0 Ohm
ID=R2
R=0.5 Ohm
ID=C7
C=6.8 pF
NET="AH118"
ID=C1
C=100000 pF
ID=C3
C=1000 pF
IND
ID=L1
L=33 nH
ID=L3
L=2.2 nH
ID=C9
C=2 pF
ID=C2
C=56 pF
ID=C5
C=56 pF
Notes:
1. The diode D1 is used as over-voltage protection on the evaluation boards. It is not specifically
required in the final circuit layout in a system using a DC regulator.
2. L2 - the 0 Ω resistor - can be removed (with a thru line) in the final circuit layout.
3. The distance from U1 pin1 pad to the edge of C7 is 120 mil.
4. The distance from U1 pin3 pad to the edge of C9 is 350 mil.
Bill of Material
Ref Des
U1
Value
C1 0.1 μF
C2, C4, C5
C3
C7
56 pF
1000 pF
6.8 pF
C9 2.0 pF
L1 33 nH
L2 0 Ω
L3 2.2 nH
R2 0.51 Ω
R1
D1
Description
High Linearity Amplifier
Cap, Chip, 1206, 50 V, 10%, X7R
Cap, Chip, 0603, 50 V, 5%, NPO/COG
Cap, Chip, 0805, 50 V, 5%, NPO
Cap, Chip, 0603, 200 V, NPO/COG
Cap, Chip, 0603, 200 V, NPO/COG
Ind, Chip, 0603, 5%, Ceramic Core
Res, Chip, 0603, 5%, 1/16 W
Ind, Chip, 0603, ±0.3 nH, Multilayer
Res, Chip, 0603, 5%, 1/10 W
No Load Part
Zener Diode, SOD-123
Manufacturer
TriQuint
various
various
various
various
various
various
various
various
various
Part Number
AH118-89G
Data Sheet: Rev B 02/14/12
© 2012 TriQuint Semiconductor, Inc.
- 4 of 14 -
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®

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AH118 전자부품, 판매, 대치품
AH118
¼ Watt, High Linearity InGaP HBT Amplifier
Typical Performance 1900 MHz
Frequency
Gain [1]
Input Return Loss
Output Return Loss
Output P1dB
Output IP3 [2]
Channel Power @ -45 dBc ACLR [3]
Quiescent Current , Icq
Device / Supply Voltage , Vcc
MHz
dB
dB
dB
dBm
dBm
dBm
mA
V
1900
16.0
7.5
11.4
25.4
41.5
14
160
+5
Notes
1. Test conditions unless otherwise noted: 25 ºC, +5V, in tuned application circuit.
2. OIP3 is measured at 11 dBm Pout / tone with 1 MHz spacing.
3. ACLR test set-up: 3GPP WCDMA, TM1+64DPCH, +5MHz Offset, PAR = 10.2 dB @ 0.01% Probability.
18
17
16
15
14
13
1.88
45
Gain vs. Frequency
25oC
1.89 1.9 1.91
Frequency (GHz)
OIP3 vs. Output Power
Frequency: 1900MHz, 1MHz Spacing, 25oC
40
35
30
25
6
8 10 12 14
Output Power / Tone (dBm)
S11 and S22 vs. Frequency
25oC
0
-5
S11
-10
S22
1.92
-15
1.88
1.89 1.9 1.91
Frequency (GHz)
1.92
ACLR1 vs. Output Power
3GPP WCDMA, TM1+64DPCH, PAR=10.2dB, 5MHz Offset, 25oC
-35
-40
-45
-50
-55
-60
16 11
1900 MHz
12 13 14
Output Power (dBm)
15
Data Sheet: Rev B 02/14/12
© 2012 TriQuint Semiconductor, Inc.
- 7 of 14 -
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®

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