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PDF TGA2585-SM Data sheet ( Hoja de datos )
| Número de pieza | TGA2585-SM | |
| Descripción | 18W GaN Power Amplifier | |
| Fabricantes | TriQuint Semiconductor | |
| Logotipo |  |
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Applications
• Commercial and Military Radar
TGA2585-SM
2.7 to 3.7GHz, 18W GaN Power Amplifier
Product Features
• Frequency Range: 2.7 - 3.7 GHz
• PSAT: 42.5 dBm
• PAE: > 50 %
• Small Signal Gain: 32 dB
• Return Loss: > 10 dB
• Bias: VD = 28 V (CW or Pulsed), IDQ = 225 mA,
VG = −2.5 V Typical
• Package Dimensions: 5.0 x 5.0 x 1.45 mm
QFN 5x5 mm 32L
Functional Block Diagram
32 31 30 29 28 27 26 25
1
2
RF OUT 3
4
5
6
7
8
24
23
22 RF IN
21
20
19
18
17
9 10 11 12 13 14 15 16
General Description
TriQuint’s TGA2585-SM is a packaged MMIC power
amplifier which operates from 2.7 to 3.7 GHz. The
TGA2585-SM is designed using TriQuint’s production
0.25-μm GaN on SiC process.
The TGA2585-SM typically provides 42.5 dBm of
saturated output power, > 50% power-added efficiency,
and 32 dB small signal gain. It can operate under both
pulse and CW conditions.
The TGA2585-SM is available in a low-cost, surface
mount 32 lead 5x5 AIN QFN. It is ideally suited to
support both commercial and defense related radar
applications.
Pin Configuration
Pad No.
1, 3-4, 6, 8-9, 13, 16-17, 19,
21, 23-25, 32
3
5, 7, 10-11, 15, 18, 20, 26-31
12
14
22
Symbol
GND
RF OUT
NC
DRAIN
GATE
RF IN
Both RF ports have integrated DC blocking capacitors
and are fully matched to 50 ohms.
Lead-free and RoHS compliant
Evaluation Boards are available upon request.
Ordering Information
Part
TGA2585-SM
ECCN
EAR99
Description
2.7 - 3.7 GHz, 18 W
GaN Power Amplifier
Preliminary Datasheet: Rev-A 03-03-15
© 2015 TriQuint
- 1 of 13 -
Disclaimer: Subject to change without notice
www.triquint.com
1 page  
TGA2585-SM
2.7 to 3.7GHz, 18W GaN Power Amplifier
Typical Performance: Large Signal
Condition: Pulsed VD, Pulse Width = 100 us, Duty Cycle = 10%
45 Output Power vs. Frequency vs. VD
IDQ = 225 mA, PIN = 18 dBm
44
43
42
41
40 25 V
39 28 V
32 V
38
37
36
35
2.3 2.5 2.7 2.9 3.1 3.3 3.5 3.7 3.9
Frequency (GHz)
4.1
45 Output Power vs. Frequency vs. IDQ
VD = 28 V, PIN = 18 dBm
44
43
42
41
40 225 mA
39 450 mA
38
37
36
35
2.3 2.5 2.7 2.9 3.1 3.3 3.5 3.7 3.9
Frequency (GHz)
4.1
Output Power vs. Input Power vs. Freq.
46
44 VD = 28 V, IDQ = 225 mA
Temp. = +25 °C
42
40
38
36
34
32
30 2.7 GHz
28 3.1 GHz
26 3.5 GHz
24
22
-10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 20 22
Input Power (dBm)
Output Power vs. Frequency vs. Temp.
45
VD = 28 V, IDQ = 225 mA, PIN = 18 dBm
44
43
42
41 +85°C
40 +25°C
−40°C
39
38
37
36
35
2.3 2.5 2.7 2.9 3.1 3.3 3.5 3.7 3.9 4.1
Frequency (GHz)
Output Power vs. Input Power vs. Temp.
46
44 VD = 28 V, IDQ = 225 mA, 3.1 GHz
42
40
38
36
34
32 +85°C
30 +25°C
28 −40°C
26
24
22
-10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 20 22
Input Power (dBm)
Preliminary Datasheet: Rev-A 03-03-15
© 2015 TriQuint
- 5 of 13 -
Disclaimer: Subject to change without notice
www.triquint.com
5 Page 
Mechanical Information
TGA2585-SM
2.7 to 3.7GHz, 18W GaN Power Amplifier
Units: inches
Tolerances: unless specified
x.xx = ± 0.01
x.xxx = ± 0.005
Materials:
Base: Ceramic
Lid: Plastic
All metalized features are gold plated
Part is epoxy sealed
Marking:
2583: Part number
YY: Part Assembly year
WW: Part Assembly week
MXXX: Batch ID
Preliminary Datasheet: Rev-A 03-03-15
© 2015 TriQuint
- 11 of 13 -
Disclaimer: Subject to change without notice
www.triquint.com
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet TGA2585-SM.PDF ] | |
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