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Datasheet BD179 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | BD179 | EPITAXIAL SILICON POWER TRANSISTORS Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
EPITAXIAL SILICON POWER TRANSISTORS
BD175 BD177 BD179 NPN
BD176 BD178 BD180 PNP
ECB Intended for use in Medium Power Linear Switching Applications
TO126 Plastic Package
ABSOLUTE MAXIMUM RATINGS DESCRIPTI | CDIL | transistor |
2 | BD179 | EPITAXIAL SILICON POWER TRANSISTORS Transys
Electronics
LIMITED
EPITAXIAL SILICON POWER TRANSISTORS
BD175 BD177 BD179 NPN
BD176 BD178 BD180 PNP
ECB Intended for use in Medium Power Linear Switching Applications
TO126 Plastic Package
ABSOLUTE MAXIMUM RATINGS DESCRIPTION
Collector -Emitter Voltage Collector -Base Voltage Emitter B | TRANSYS | transistor |
3 | BD179 | Plastic Medium Power Silicon NPNP Transistor MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BD179/D
Plastic Medium Power Silicon NPN Transistor
. . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 0.15 Adc � | Motorola Inc | transistor |
4 | BD179 | Plastic Medium-Power NPN Silicon Transistor BD179
Plastic Medium-Power NPN Silicon Transistor
This device is designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.
Features
•ăDC Current Gain - hFE = 40 (Min) @ IC = 0.15 Adc •ăBD179 is complementary with BD180 •ăPb-Free | ON Semiconductor | transistor |
5 | BD179 | NPN power transistor BD179
NPN power transistor
Features
■ NPN transistor
Applications
t(s)■ General purpose switching ucDescription rodThe device is manufactured in Planar technology
with “Base Island” layout. The resulting transistor
Pshows exceptional high gain performance Obsolete Product(s) - Obsoletecou | STMicroelectronics | transistor |
BD1 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | BD1 | Diode (spec sheet) American Microsemiconductor diode | | |
2 | BD101 | RECTIFIER DIODE Varactor Diode
Peak Repetitive Reverse Voltage Part Number V RRM
SOD-723
(P.28)
1S513 (800M Hz VCO) 1S515 (1.9G Hz VCO) 1S526 (2.4G Hz VCO)
SOD-523
1S402 1S403 1S404 1S405 1S407 1S409 1S410 1S413 1S415 1S417
w
w
a D . w
(P.28)
ta
Sh
t e e
4U
V 15 15 15 30 30 34 34 34 15 30 15 15 30 15
.c Sinyork rectifier | | |
3 | BD101W | RECTIFIER DIODE Varactor Diode
Peak Repetitive Reverse Voltage Part Number V RRM
SOD-723
(P.28)
1S513 (800M Hz VCO) 1S515 (1.9G Hz VCO) 1S526 (2.4G Hz VCO)
SOD-523
1S402 1S403 1S404 1S405 1S407 1S409 1S410 1S413 1S415 1S417
w
w
a D . w
(P.28)
ta
Sh
t e e
4U
V 15 15 15 30 30 34 34 34 15 30 15 15 30 15
.c Sinyork rectifier | | |
4 | BD101WS | RECTIFIER DIODE Varactor Diode
Peak Repetitive Reverse Voltage Part Number V RRM
SOD-723
(P.28)
1S513 (800M Hz VCO) 1S515 (1.9G Hz VCO) 1S526 (2.4G Hz VCO)
SOD-523
1S402 1S403 1S404 1S405 1S407 1S409 1S410 1S413 1S415 1S417
w
w
a D . w
(P.28)
ta
Sh
t e e
4U
V 15 15 15 30 30 34 34 34 15 30 15 15 30 15
.c Sinyork rectifier | | |
5 | BD1020HFV | Temperature Sensor IC Datasheet
Temperature Sensor IC
Analog Output
BD1020HFV
General Description BD1020HFV is a low quiescent current (4µA) and high accuracy temperature sensor. This IC has a linear response with respect to temperature.
Features Low Thermal Resistance ( typically 187°C/W ) ESD Rating 8kV ( H ROHM Semiconductor sensor | | |
6 | BD1040S | SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS BD1040S
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
VOLTAGE
40 Volt
CURRENT 10 Ampere
FEATURES
• Plastic package has Underwriters Laboratory Flammability Classification 94V-O
• For surface mounted applications in order to optimize board space • Low power loss, High efficiency • High surge Pan Jit International rectifier | | |
7 | BD106A | (BD1xx) TRANSISTOR w
w
w
.d
e e h s a t a
. u t4
m o c
Semelab PLC transistor | |
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Número de pieza | Descripción | Fabricantes | |
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