|
|
PDF BSZ215CH Data sheet ( Hoja de datos )
| Número de pieza | BSZ215CH | |
| Descripción | Small Signal Transistor | |
| Fabricantes | Infineon | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de BSZ215CH (archivo pdf) en la parte inferior de esta página. Total 13 Páginas | ||
|
No Preview Available !
OptiMOS™2 + OptiMOS™-P 2 Small Signal Transistor
Features
Product Summary
· Complementary P + N channel
· Enhancement mode
· Super Logic level (2.5V rated)
· Common drain
· Avalanche rated
VDS
RDS(on),max
ID
VGS=±4.5 V
VGS=±2.5 V
· 175 °C operating temperature
· Qualified according to AEC Q101
· 100% lead-free; RoHS compliant
S1 1
G1 2
8 D2
7 D1
· Halogen-free according to IEC61246-21 S2 3
6 D2
G2 4
5 D2
BSZ215C H
PN
-20 20 V
150 55 mW
310 95
-3.2 5.1 A
Type
BSZ215C H
Package
PG-TSDSON-8 LTI
Marking
215C
Lead Free
Yes
Maximum ratings, at T j=25 °C, unless otherwise specified 1)
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Gate source voltage
Power dissipation
ID
I D,pulse
E AS
V GS
P tot 2)
T A=25 °C
T A=100 °C
T A=25 °C
P: I D=-3.2 A,
N: I D=5.1 A,
R GS=25 W
T A=25 °C
Halogen Free
Yes
Packing
Non dry
Value
PN
-3.2 5.1
-2.2 3.6
-13 20
11 11
±12
2.5
Unit
A
mJ
V
W
Operating and storage temperature T j, T stg
-55 ... 175
°C
ESD class
Soldering temperature
T solder
IEC climatic category; DIN IEC 68-1
1) Remark: only one of both transistors active
JESD22-A114-HBM
0 (<250V)
260
55/175/56
°C
Rev 2.0
page 1
2015-07-15
1 page  
1 Power dissipation (P)
P tot=f(T A)
2 Power dissipation (N)
P tot=f(T A)
BSZ215C H
33
2.5 2.5
22
1.5 1.5
11
0.5 0.5
0
0 40
3 Drain current (P)
I D=f(T A)
parameter: V GS≤-4.5 V
3.5
80 120
TA [°C]
3
2.5
2
1.5
1
0.5
0
0
Rev 2.0
40 80 120
TA [°C]
0
160 0 40 80 120 160
TA [°C]
4 Drain current (N)
I D=f(T A)
parameter: V GS≥4.5 V
5.5
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
160 0 40 80 120 160
TA [°C]
page 5
2015-07-15
5 Page 
25 Typ. gate charge (P)
V GS=f(Q gate); I D=-3.2A pulsed
parameter: V DD
6
26 Typ. gate charge (N)
V GS=f(Q gate); I D=5.1A pulsed
parameter: V DD
6
BSZ215C H
55
-4 V -16 V
-10 V
44
33
4 V 10 V
16 V
22
11
0
01234
-Qgate [nC]
27 Drain-source breakdown voltage (P)
V BR(DSS)=f(T j); I D=-250 µA
0
5 0 0.5 1 1.5 2 2.5
Qgate [nC]
28 Drain-source breakdown voltage (N)
V BR(DSS)=f(T j); I D=250 µA
3
25
24
23
22
21
20
19
18
17
16
-60
-20
20
60 100 140 180
Tj [°C]
25
24
23
22
21
20
19
18
17
16
-60 -20 20 60 100 140 180
Tj [°C]
Rev 2.0
page 11
2015-07-15
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet BSZ215CH.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| BSZ215CH | Small Signal Transistor | Infineon |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |