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부품번호 | FQP50N06 기능 |
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기능 | N-Channel Power MOSFET / Transistor | ||
제조업체 | Thinki Semiconductor | ||
로고 | |||
전체 6 페이지수
FQP50N06
®
FQP50N06
Pb
Pb Free Plating Product
50A,60V Heatsink Planar N-Channel Power MOSFET
Features
• 50A, 60V, RDS(on) = 0.022Ω @VGS = 10 V
• Low gate charge ( typical 31 nC)
• Low Crss ( typical 65 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
1. Gate {
{ 2. Drain
●
◀▲
●
●
{ 3. Source
General Description
This N-channel enhancement mode field-effect power transistor
using THINKI Semiconductor advanced planar stripe, DMOS technol-
ogy intended for off-line switch mode power supply.
Also, especially designed to minimize rds(on) and high rugged
avalanche characteristics. The TO-220M pkg is well suited for
adaptor power unit and small power inverter application.
BVDSS = 60V
RDS(ON) = 0.022 ohm
ID = 50A
TO-220M
23
1
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
FQP50N06
60
50
35.4
200
± 25
490
50
12
7.0
120
0.8
-55 to +175
300
Typ Max
-- 1.24
0.5 --
-- 62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 1/6
http://www.thinkisemi.com/
FQP50N06
®
Typical Characteristics (Continued)
1.2
1.1
1.0
0.9 ※Notes:
1.
2.
VIDG=S =2500Vμ
A
0.8
-100
-50 0 50 100 150
TJ, JunctionTemperature[oC]
200
Figure 7. Breakdown Voltage Variation
vs. Temperature
103
Operation in This Area
is Limited by R DS(on)
102
101
100
10-1
100μ s
1 ms
10 ms
DC
※ Notes :
1. TC = 25 oC
2. T = 175 oC
J
3. Single Pulse
100 101
VDS, Drain-Source Voltage [V]
102
Figure 9. Maximum Safe Operating Area
2.5
2.0
1.5
1.0
0.5 ※ Notes :
1. VGS = 10 V
2. I = 25 A
D
0.0
-100
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 8. On-Resistance Variation
vs. Temperature
60
50
40
30
20
10
0
25 50 75 100 125 150 175
TC, Case Temperature [℃]
Figure 10. Maximum Drain Current
vs. Case Temperature
100
D =0 .5
0 .2
1 0 -1
0 .1
0.0 5
0.0 2
0.0 1
sin g le p u ls e
※ Notes :
1 . Z θ J C( t ) = 1 . 2 4 ℃ /W M a x .
2 . D u t y Fa c t o r , D = t /t
12
3 . T J M - T C = P D M * Z θ J C( t )
PDM
t1
t2
1 0 -2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
101
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 4/6
http://www.thinkisemi.com/
4페이지 | |||
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부품번호 | 상세설명 및 기능 | 제조사 |
FQP50N06 | 60V N-Channel MOSFET | Fairchild Semiconductor |
FQP50N06 | N-Channel Power MOSFET / Transistor | Thinki Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |