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PDF FQP65N06 Data sheet ( Hoja de datos )
| Número de pieza | FQP65N06 | |
| Descripción | N-Channel Power MOSFET / Transistor | |
| Fabricantes | Thinki Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de FQP65N06 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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FQP65N06
®
FQP65N06
Pb
Pb Free Plating Product
65A,60V Heatsink Planar N-Channel Power MOSFET
Features
• 65A, 60V, RDS(on) = 0.016Ω @VGS = 10 V
• Low gate charge ( typical 48 nC)
• Low Crss ( typical 100 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
1. Gate {
{ 2. Drain
●
◀▲
●
●
{ 3. Source
BVDSS = 60V
RDS(ON) = 0.016 ohm
ID = 65A
General Description
This N-channel enhancement mode field-effect power transistor
using THINKI Semiconductor advanced planar stripe, DMOS technol-
ogy intended for off-line switch mode power supply.
Also, especially designed to minimize rds(on) and high rugged
avalanche characteristics. The TO-220M pkg is well suited for
adaptor power unit and small power inverter application.
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
TO-220M
FQP65N06
60
65
46.1
260
± 25
650
65
15.0
7.0
150
1.00
-55 to +175
300
23
1
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Typ
Max
Units
--
1.00
°C/W
0.5 -- °C/W
-- 62.5 °C/W
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 1/6
http://www.thinkisemi.com/
1 page  
FQP65N06
®
Gate Charge Test Circuit & Waveform
Same Type
50KΩ
as DUT
12V 200nF
300nF
VGS
10V
Qg
VGS
VDS
Qgs Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
10V
VDS
VGS
RG
RL
VDD
DUT
VDS
90%
VGS 10%
td(on)
tr
t on
td(off)
tf
t off
Unclamped Inductive Switching Test Circuit & Waveforms
VDS
ID
RG
L
EAS =
--1--
2
L IAS2
BVDSS
--------------------
BVDSS - VDD
BVDSS
IAS
VDD ID (t)
10V
tp
DUT
VDD VDS (t)
t p Time
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 5/6
http://www.thinkisemi.com/
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet FQP65N06.PDF ] | |
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