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AUIRF7343Q 데이터시트 PDF




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부품번호 AUIRF7343Q 기능
기능 Dual N and P Channel MOSFET
제조업체 Infineon
로고 Infineon 로고


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AUIRF7343Q 데이터시트, 핀배열, 회로
 
AUTOMOTIVE GRADE
AUIRF7343Q
Features
Advanced Planar Technology
Ultra Low On-Resistance
Logic Level Gate Drive
Dual N and P Channel MOSFET
Surface Mount
Available in Tape & Reel
150°C Operating Temperature
Lead-Free, RoHS Compliant
Automotive Qualified *
  N-CHANNEL MOSFET
N-CH P-CH
S1 1
G1 2
8 D1
7 D1
VDSS
55V -55V
S2 3
6 D2 RDS(on) typ. 0.043 0.095
G2 4
5 D2
max. 0.050 0.105
P-CHANNEL MOSFET
ID
4.7A -3.4A
Top View
Description
Specifically designed for Automotive applications, these HEXFET® Power
MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to
achieve extremely low on-resistance per silicon area. Additional features of
these Automotive qualified HEXFET Power MOSFET's are a 150°C junction
operating temperature, fast switching speed and improved repetitive
avalanche rating. These benefits combine to make this design an extremely
efficient and reliable device for use in Automotive applications and a wide
variety of other applications.
The efficient SO-8 package provides enhanced thermal characteristics and
dual MOSFET die capability making it ideal in a variety of power applications.
This dual, surface mount SO-8 can dramatically reduce board space and is
also available in Tape & Reel.
SO-8
AUIRF7343Q
G
Gate
D
Drain
S
Source
Base part number
AUIRF7343Q
Package Type
SO-8
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
AUIRF7343QTR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Parameter
Drain-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Max.
N-Channel
P-Channel
55 -55
4.7 -3.4
3.8 -2.7
38 -27
2.0
1.3
Units
V
A 
W
EAS
IAR
EAR
VGS
dv/dt
TJ
TSTG
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
72 114 
4.7 -3.4
0.20
± 20  
5.0 -5.0
-55 to + 150
mJ
A
mJ
V
V/ns
°C 
Thermal Resistance  
Symbol
Parameter
RJA Junction-to-Ambient ( PCB Mount, steady state)
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
Typ.
–––
Max.
62.5
Units
°C/W
2015-9-30




AUIRF7343Q pdf, 반도체, 판매, 대치품
 
N-Channel
AUIRF7343Q
2.5 ID = 4.7A
2.0
1.5
1.0
0.5
0.0 VGS = 10V
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C)
Fig 5. Normalized On-Resistance
Vs. Temperature
 
Fig 6. Typical On-Resistance Vs. Drain
Current
Fig. 7 Typical On-Resistance Vs. Gate Voltage
 4
200 ID
TOP 2.1A  
3.8A
160 BOTTOM 4.7A
120
80
40
0
25 50 75 100 125 150
Starting TJ , Junction Temperature ( °C)
Fig 8. Maximum Avalanche Energy
Vs. Drain Current
2015-9-30

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AUIRF7343Q 전자부품, 판매, 대치품
  P-Channel
2.0 ID = -3.4 A
1.5
1.0
0.5
0.0 VGS = -10V
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature( °C)
Fig 16. Normalized On-Resistance
Vs. Temperature
AUIRF7343Q
Fig 17. Typical On-Resistance Vs.
Drain Current
Fig. 18 Typical On-Resistance Vs. Gate Voltage
 7
300 ID
TOP -1.5A
250 -2.7A
BOTTOM -3.4A
200
150
100
50
0
25 50 75 100 125 150
Starting T J, Junction Temperature ( °C)
Fig 19. Maximum Avalanche Energy
Vs. Drain Current
2015-9-30

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부품번호상세설명 및 기능제조사
AUIRF7343Q

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AUIRF7343Q

Dual N and P Channel MOSFET

Infineon
Infineon

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