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부품번호 | HFF5N60 기능 |
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기능 | N-Channel Enhancement Mode Field Effect Transistor | ||
제조업체 | HUASHAN ELECTRONIC | ||
로고 | |||
Shantou Huashan Electronic Devices Co.,Ltd.
HFF5N60
N-Channel Enhancement Mode Field Effect Transistor
█ General Description
These are N-Channel enhancement mode silicon gate power field effect transistors.
They are advanced power MOSFETs designed, this advanced technology has been
especially tailored to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche and commutation
mode . These devices are well suited for high efficiency switch mode power supply,
power factor correction, electronic lamp ballast based on half bridge.
█ Features
• 4.5A, 600V(See Note), RDS(on) <2.5Ω@VGS = 10 V
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Equivalent Type: FQPF5N60C
█ Maximum Ratings(Ta=25℃ unless otherwise specified)
TO-220F
1
1- G 2-D 3-S
Tstg——Storage Temperature ------------------------------------------------------ -55~150℃
Tj ——Operating Junction Temperature -------------------------------------------------- 150℃
VDSS —— Drain-Source Voltage ----------------------------------------------------------600V
VGSS —— Gate-Source Voltage --------------------------------------------------------------------------- ±30V
ID —— Drain Current (Continuous)(Tc=25℃)----------------------------------------------------------- 4.5A
IDM —— Pulsed Drain Current (Note 1)------------------------------------------------------------------- 18A
PD —— Maximum Power Dissipation (Tc=25℃)-------------------------------------------------------- 33W
Derate Above 25℃ ------------------------------------------------------------------------- 0.26W/℃
EAS—— Pulsed Avalanche Energy (Note 2) ----------------------------------------------------------- 210mJ
IAR—— Avalanche Current (Note 1) ----------------------------------------------------------------------- 4.5A
EAR —— Repetitive Avalanche Energy (Note 1) ------------------------------------------------------- 10mJ
dv/dt —— Peak Diode Recovery dv/dt (Note 3) ------------------------------------------------------4.5V/ns
█ Thermal Characteristics
Symbol
Rthj-case
Rthj-amb
Items
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
TO-220F
Max 3.79
Max 62.5
Unit
℃/W
℃/W
Shantou Huashan Electronic Devices Co.,Ltd.
█ Typical Characteristics
HFF5N60
4페이지 | |||
구 성 | 총 6 페이지수 | ||
다운로드 | [ HFF5N60.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
HFF5N60 | N-Channel Enhancement Mode Field Effect Transistor | HUASHAN ELECTRONIC |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |