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부품번호 | BD45E445-M 기능 |
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기능 | Counter Timer Built-in CMOS Voltage Detector IC | ||
제조업체 | ROHM Semiconductor | ||
로고 | |||
Datasheet
Voltage Detector IC Series for Automotive
Counter Timer Built-in
CMOS Voltage Detector IC
BD45Exxxx-M series BD46Exxxx-M series
●General Description
ROHM’s BD45Exxxx-M and BD46Exxxx-M series are
highly accurate, low current consumption Voltage
Detector IC series. Because the counter timer delay
circuit is built into those series, an external capacitor for
the delay time setting is unnecessary. The lineup was
established with two output types (Nch open drain and
CMOS output) and detection voltages range from 2.3V
to 4.8V in increments of 0.1V, so that the series may be
selected according to application.
●Features
Counter Timer Built-in
No delay time setting capacitor required
Ultra-low current consumption
Two output types (Nch open drain and CMOS output)
Package SSOP5 is similar to SOT-23-5 (JEDEC)
AEC-Q100 Qualified
●Key Specifications
Detection voltage:
2.3V to 4.8V (Typ.)
High accuracy detection voltage:
Ultra-low current consumption:
Operating temperature range:
Three internal, fixed delay time:
0.1V steps
±1.0%
0.85µA (Typ.)
-40°C to +105°C
50ms
100ms
200ms
●Package
SSOP5
2.90mm x 2.80mm x 1.25mm
●Applications
Circuits using microcontrollers or logic circuits that
require a reset for automotive applications (car
navigation, car audio, meter panel, exterior lamp etc.)
●Typical Application Circuit
VDD1
VDD2
BD45Exxxx-M
RL
Micro
RST controller
CL
(Noise-filtering
Capacitor)
(Open Drain Output Type)
BD45Exxxx-M series
●Connection Diagram
SSOP5
VDD
VOUT
GND
TOP VIEW
Marking
Lot. No
ER SUB GND
VDD1
BD46Exxxx-M
RST
Micro
controller
GND
CL
(Noise-filtering
Capacitor)
(CMOS Output Type)
BD46Exxxx-M series
●Pin Descriptions
PIN No. Symbol
Function
1 ER Manual Reset
2
SUB
Substrate *
3
GND
GND
4
VOUT
Reset Output
5 VDD Power Supply Voltage
*Connect the substrate to GND.
○Product structure:Silicon monolithic integrated circuit
.www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
TSZ22111・14・001
○This product is not designed for protection against radioactive rays
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BD45Exxxx-M series BD46Exxxx-M series
Absolute maximum ratings
Parameter
Symbol
Limits
Power Supply Voltage
VDD-GND
-0.3 to +10
Output Voltage
Nch Open Drain Output
CMOS Output
VOUT
GND-0.3 to +10
GND-0.3 to VDD+0.3
Output Current
IO 60
ER pin Voltage
VCT
GND-0.3 to VDD+0.3
Power Dissipation
*1,*2
Pd
540
Operating Temperature
Topr -40 to +105
Ambient Storage Temperature
Tstg -55 to +125
*1 Reduced by 5.4mW/°C when used over 25°C.
*2 When mounted on ROHM standard circuit board (70mm×70mm×1.6mm, glass epoxy board).
Unit
V
V
mA
V
mW
°C
°C
●Electrical characteristics (Unless Otherwise Specified Ta=-40 to 105°C)
Parameter
Symbol
Condition
Detection Voltage
Detection Voltage
Temperature coefficient
Hysteresis Voltage
‘High’ Output
Delay time
Circuit Current
when ON
Circuit Current
when OFF
VDD=HL, RL=470kΩ
VDET
VDET/
∆T
∆VDET
VDET=2.5V
VDET=3.0V
VDET=3.3V
VDET=4.2V
VDET=4.8V
-40°C to +105°C
Ta=+25°C
Ta=-40°C to 85°C
Ta=85°C to 105°C
Ta=+25°C
Ta=-40°C to 85°C
Ta=85°C to 105°C
Ta=+25°C
Ta=-40°C to 85°C
Ta=85°C to 105°C
Ta=+25°C
Ta=-40°C to 85°C
Ta=85°C to 105°C
Ta=+25°C
Ta=-40°C to 85°C
Ta=85°C to 105°C
VDD=LHL, RL=470kΩ
tPLH
IDD1
IDD2
CL=100pF,
RL=100kΩ
BD45EXX5, BD46EXX5
BD45EXX1, BD46EXX1
*1,*2,*3 BD45EXX2, BD46EXX2
VDD=VDET-0.2V, VER=0V VDET=2.3V to 3.1V
VDD=VDET-0.2V, VER=0V VDET=2.3V to 3.1V
VDD=VDET-0.2V, VER=0V VDET=3.2V to 4.2V
VDD=VDET-0.2V, VER=0V VDET=3.2V to 4.2V
VDD=VDET-0.2V, VER=0V VDET=4.3V to 4.8V
VDD=VDET-0.2V, VER=0V VDET=4.3V to 4.8V
VDD=VDET+0.2V, VER=0V VDET=2.3V to 3.1V
VDD=VDET+0.2V, VER=0V VDET=2.3V to 3.1V
VDD=VDET+0.2V, VER=0V VDET=3.2V to 4.2V
VDD=VDET+0.2V, VER=0V VDET=3.2V to 4.2V
VDD=VDET+0.2V, VER=0V VDET=4.3V to 4.8V
VDD=VDET+0.2V, VER=0V VDET=4.3V to 4.8V
Min.
VDET(T)
*1 ×0.99
2.475
2.418
2.404
2.970
2.901
2.885
3.267
3.191
3.173
4.158
4.061
4.039
4.752
4.641
4.616
-
VDET(T)
×0.03
45
90
180
*1 -
-
*1 -
-
*1 -
-
*1 -
-
*1 -
-
*1 -
-
Limit
Typ.
VDET(T)
2.5
-
-
3.0
-
-
3.3
-
-
4.2
-
-
4.8
-
-
±100
VDET(T)
×0.05
50
100
200
0.70
0.70
0.75
0.75
0.80
0.80
0.75
0.75
0.80
0.80
0.85
0.85
Max.
VDET(T)
×1.01
2.525
2.584
2.597
3.030
3.100
3.117
3.333
3.410
3.428
4.242
4.341
4.364
4.848
4.961
4.987
Unit
V
±360 ppm/°C
VDET(T)
×0.08
55
110
220
2.10
2.85
2.25
3.00
2.40
3.15
2.25
4.28
2.40
4.50
2.55
4.73
V
ms
µA
µA
VDET(T):Standard Detection Voltage (2.3V to 4.8V, 0.1V step)
RL :Pull-up resistor to be connected between VOUT and power supply.
CL :Capacitor to be connected between VOUT and GND.
*1 Guarantee is Ta=25°C.
*2 tPLH:VDD=(VDET(T)-0.5V)(VDET(T)+0.5V)
*3 tPLH:VDD=Please set up the rise up time between VDD=0VDET more than 100µs.
Attention: Please connect ‘ER’ to the GND when not in use.
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
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TSZ02201-0R7R0G300110-1-2
27.Aug.2013 Rev.004
4페이지 BD45Exxxx-M series BD46Exxxx-M series
●Typical Performance Curves
2.0
【BD4【5BED248512-8M1】G】
1.5 【BD46E281-M】
1.0
0.5
0.0
0 1 2 3 4 5 6 7 8 9 10
VDD SUPPLY VOLTAGE :VDD[V]
Fig.3 Circuit Current
20
【BD【4B6ED248612-8M1G】】
15 VDD=6.0V
10 VDD=4.8V
5
0
0 12 34 56
DRAIN-SOURCE VOLTAGE : VDS[V]
Fig.5 “High” Output Current
20
【B【D4B5DE4258218-1MG】】
15 【BD46E281-M】
VDD=2.4V
10
5
VDD=1.2V
0
0.0 0.5 1.0 1.5 2.0 2.5
DRAIN-SOURCE VOLTAGE : VDS[V]
Fig.4 “Low” Output Current
7
【BD4【5BED284154-M21】G】
6
【BD46E281-M】
5
4
3 Ta=25℃
2
1
Ta=25℃
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
VDD SUPPLY VOLTAGE :VDD[V]
Fig.6 I/O Characteristics
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
7/14
TSZ02201-0R7R0G300110-1-2
27.Aug.2013 Rev.004
7페이지 | |||
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부품번호 | 상세설명 및 기능 | 제조사 |
BD45E445-M | Counter Timer Built-in CMOS Voltage Detector IC | ROHM Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |