|
|
|
부품번호 | BU2JTH5WNVX 기능 |
|
|
기능 | FULL CMOS LDO Regulator | ||
제조업체 | ROHM Semiconductor | ||
로고 | |||
전체 24 페이지수
Datasheet
CMOS LDO Regulator for Portable Equipments
High Ripple Rejection,
Low Current Consumption,
Versatile Package
FULL CMOS LDO Regulator (500mA)
BUXXTH5WNVX
General Description
BUXXTH5WNVX is high-performance FULL CMOS
regulator with 500-mA output, which is mounted on
versatile package SSON004X1010 (1.00mm × 1.00 mm
× 0.60mm). It has excellent ripple rejection, noise
characteristics and load responsiveness characteristics
despite its low circuit current consumption of 10µA. It is
most appropriate for various applications such as power
supplies for logic IC, RF, and camera modules.
Features
High accuracy detection
High ripple rejection
low current consumption
Compatible with small ceramic capacitor
(Cin=Co=1.0uF)
With built-in output discharge circuit
ON/OFF control of output voltage
With built-in over current protection circuit
Key Specifications
Load Current:
Accuracy output voltage:
Power Supply rejection Ratio:
Low current consumption:
Operating temperature range:
500mA
±1.0%
80dB@1KHz
10µA (TYP)
-20°C to +85°C
Applications
Smartphone, Battery-powered portable equipment, etc.
Package
SSON004X1010 :
1.00mm x 1.00mm x 0.60mm
Typical Application Circuit
CE CE
VIN VIN
1.0µF
GND
VOUT
GND
Figure 1. Application Circuit
VOUT
1.0µF
GND
○Product structure:Silicon monolithic integrated circuit
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
TSZ22111・14・001
○This product is not designed for protection against radioactive rays
TSZ02201-0GBG0A600020-1-2
1/20
14.Dec.2015.Rev.004
BUXXTH5WNVX
Block Diagrams
VIN
VIN
CIN
GND
CE
CE
VREF
OCP
Datasheet
VOUT
VOUT
Co
CIN・・・1.0µF (Ceramic capacitor)
Co ・・・1.0µF (Ceramic capacitor)
Figure 2. Block Diagrams
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
4/20
TSZ02201-0GBG0A600020-1-2
14.Dec.2015.Rev.004
4페이지 BUXXTH5WNVX
Reference data BU1ATH5WNVX (Ta=25ºC unless otherwise specified.)
Datasheet
START UP TIME
1.5V
CE
0V
DISCHARGE TIME
1.5V
CE 0V
VOUT
20µs/div
Figure 13.
VIN=2.5V
Ta=25℃
Iout=0mA
Cout=1.0uF
VOUT
40µs/div
Figure 14.
VIN=2.5V
Ta=25℃
Iout=0mA
Cout=1.0uF
Trise=12us
IOUT
LOAD TRANSIENT RESPONSE
250mA
1mA
VOUT
20µs/div
Figure 15.
VIN=2.5V
CE=VIN
Ta=25℃
SHUTDOWN CURRENT vs INPUT VOLTAGE
10.00
VIN=5.5V
CE=0V
1.00
0.10
0.01
-20
0
20 40
Temperature[℃]
Figure 16.
60
80
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
7/20
TSZ02201-0GBG0A600020-1-2
14.Dec.2015.Rev.004
7페이지 | |||
구 성 | 총 24 페이지수 | ||
다운로드 | [ BU2JTH5WNVX.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
BU2JTH5WNVX | FULL CMOS LDO Regulator | ROHM Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |