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BH25MA3WHFV 데이터시트 PDF




ROHM Semiconductor에서 제조한 전자 부품 BH25MA3WHFV은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 BH25MA3WHFV 자료 제공

부품번호 BH25MA3WHFV 기능
기능 Standard CMOS LDO Regulators
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BH25MA3WHFV 데이터시트, 핀배열, 회로
CMOS LDO Regulator Series for Portable Equipments
Standard CMOS LDO Regulators
BH ŜŜ FB1WG series, BHŜŜ FB1WHFV series,
BH ŜŜ LB1WG series, BHŜŜ LB1WHFV series
Large Current 300mA
CMOS LDO Regulators
BH ŜŜ MA3WHFV Series
No.10020ECT02
Description
The BHŜŜFB1W, BHŜŜLB1W and BHŜŜMA3W series are low dropout CMOS regulators with 150 mA and 300 mA
output that have ±1% high accuracy output voltage.
The BHŜŜFB1W series combines 40µA low current consumption and a 70 dB high ripple rejection ratio by utilizing output
level CMOS technology. The components can be easily mounted into the small standard SSOP5 and the ultra-small
HVSOF5/HVSOF6 packages.
Features
1) High accuracy output voltage: ±1%
2) High ripple rejection ratio: 70 dB (BHŜŜFB1WHFV/WG, BHŜŜLB1WHFV/WG)
3) Low dropout voltage: 60 mV (when current is 100 mA) (BHŜŜMA3WHFV)
4) Stable with ceramic output capacitors
5) Low Bias current : 40µA (IO = 50 mA) (BHŜŜFB1WHFV/WG)
6) Output voltage ON/OFF control
7) Built-in over-current protection and thermal shutdown circuits
8) Ultra-small power package: HVSOF5 (BHŜŜFB1WHFV, BHŜŜLB1WHFV)
9) Ultra-small power package: HVSOF6 (BHŜŜMA3WHFV)
Applications
Battery-driven portable devices and etc.
Line up
150mA BHŜŜFB1W and BHŜŜLB1W Series
Part Number
1.5 1.8 1.85 2.5 2.8 2.9 3.0 3.1 3.3 Package
BHŜŜFB1WG
---
SSOP5
BHŜŜFB1WHFV - - -
HVSOF5
BHŜŜLB1WG
- - - - - - - SSOP5
BHŜŜLB1WHFV
- - - - - - HVSOF5
300mA BHŜŜMA3WHFV series
Part Number
1.5 1.8 2.5 2.8 2.9 3.0 3.1 3.3
Package
BHŜŜMA3WHFV
HVSOF6
Part Number: B H ŜŜ F B 1 W Ŝ , B H ŜŜ L B 1 W Ŝ
a ba b
Part Number: B H ŜŜ M A 3 W Ŝ
ab
Symbol
Details
Output Voltage Designation
ŜŜ Output Voltage (V) ŜŜ Output Voltage (V)
15 1.5V (Typ.) 29 2.9V (Typ.)
a 18 1.8V (Typ.) 30 3.0V (Typ.)
1J 1.85V (Typ.) 31
3.1V (Typ.)
25 2.5V (Typ.) 33 3.3V (Typ.)
28 2.8V (Typ.)
b Package: G : SSOP5 HFV : HVSOF5
Symbol
Details
Output Voltage Designation
ŜŜ Output Voltage (V) ŜŜ Output Voltage (V)
15 1.5V (Typ.) 29
2.9V (Typ.)
a
18 1.8V (Typ.) 30
3.0V (Typ.)
25 2.5V (Typ.) 31
3.1V (Typ.)
28 2.8V (Typ.) 33
3.3V (Typ.)
b Package: HFV : HVSOF6
www.rohm.com
© 2010 ROHM Co., Ltd. All rights reserved.
1/8
2010.07 - Rev. C




BH25MA3WHFV pdf, 반도체, 판매, 대치품
BH FB1WG series, BH FB1WHFV series,
BH LB1WG series, BH LB1WHFV series, BH MA3WHFV series
Typical Characteristics
• Output voltage-temperature
ΩΩ
°°
°
• Ripple reflection-frequency
Ω
°
°
Ω
°
Technical Note
Ω
°
°
Ω
°
• Load response characteristics (CO = 1.0 μF)
°
°
°
• Output voltage startup time
°
°
www.rohm.com
© 2010 ROHM Co., Ltd. All rights reserved.
4/8
2010.07 - Rev. C

4페이지










BH25MA3WHFV 전자부품, 판매, 대치품
BH FB1WG series, BH FB1WHFV series,
BH LB1WG series, BH LB1WHFV series, BH MA3WHFV series
Technical Note
Noise terminal (BHŜŜMA3WHFV)
The terminal is directly connected to inward normal voltage source. Because this has low current ability, load exceeding
100nA will cause some instability at the output. For such reasons, we urge you to use ceramic capacitors which have less
leak current. When choosing noise the current reduction capacitor, there is a trade-off between boot-up time and stability. A
bigger capacitor value will result in lesser oscillation but longer boot-up time for VOU T.
100 BH30MA3WHFV
~ Condition ~
VIN=4.0V
10 Cin=1.0μF
Co=1.0μF
ROUT=3.0kΩ
1 Ta=25°C
0.1
0.01
100P
1000P
0.01μ
0.1μ
noise-filtering capacitor capacitance Cn (F)
Fig. 35: V OUT startup time vs. noise-filtering capacitor capacitance characteristics (Example)
Regarding input pin of the IC
This monolithi c IC contains P+ isolation and P substrat e layer s between adjacent
elements in order to keep them isolated. P/N junctions are formed at the intersection of
these P layers with the N layers of other elements to create a variety of parasitic elements.
For example, when a resistor and transistor are connected to pins as shown in Fig.37
The P/N junction functions as a parasitic diode when GND > (Pin A) for the resistor or
GND > (Pin B) for the transistor (NPN).
Similarly, when GND > (Pin B) for the transistor (NPN), the parasitic diode described
above combines with the N layer of other adjacent elements to operate as a parasitic
NPN transistor.
The formation of parasitic elements as a result of the relationships of the potentials of
different pins is an inevitable result of the IC's architecture. The operation of parasitic
elements can cause interference with circuit operation as well as IC malfunction and
damage. For these reasons, it is necessary to use caution so that the IC is not used in a
way that will trigger the operation of parasitic elements, such as by the application of
voltage lower than the GND (P substrate) voltage to input pins.
back current
VCC OUT
CTL
GND
Fig. 36: Example of bypass
diode connection
(Terminal A)
Resistor
P+
N
P
P
N
P+
N
P-board
Parasitic element
GND
(Terminal B)
O
Transistor (NPN)
B
E
P+
N
N
P
N
P
Parasitic elements
GND
Fig.37
GND
P+
N
(Terminal B)
C
B
E
Other adjacent elements
GND
Parasitic elements
(Terminal A)
Parasitic element
GND
Part number selection
BH 3 0 FB1 W HFV - TR
ROHM
Output
part number voltage
Current capacity
MA3 : 300mA
FB1 : 150mA
LB1 : 150mA
Shutdown
switch
W : With switch
Package
HFV : HVSOF6
HVSOF5
G : SSOP5
Package specification
TR : Embossed taping
www.rohm.com
© 2010 ROHM Co., Ltd. All rights reserved.
7/8
2010.07 - Rev. C

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BH25MA3WHFV

Standard CMOS LDO Regulators

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