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부품번호 | MTB90P06Q8 기능 |
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기능 | P-Channel Logic Level Enhancement Mode Power MOSFET | ||
제조업체 | Cystech Electonics | ||
로고 | |||
CYStech Electronics Corp.
Spec. No. : C733Q8
Issued Date : 2011.03.30
Revised Date : 2012.03.01
Page No. : 1/9
P-Channel Logic Level Enhancement Mode Power MOSFET
MTB90P06Q8
BVDSS
ID
RDSON@VGS=-10V, ID=-5A
RDSON@VGS=-4.5V, ID=-3A
-60V
-5A
69 mΩ typ.
92 mΩ typ.
Description
The MTB90P06Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications
and suited for low voltage applications such as DC/DC converters.
Features
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Pb-free and Halogen-free package
Equivalent Circuit
MTB90P06Q8
Outline
SOP-8
G:Gate
S:Source
D:Drain
MTB90P06Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C733Q8
Issued Date : 2011.03.30
Revised Date : 2012.03.01
Page No. : 4/9
Typical Characteristics
Typical Output Characteristics
20
-10V, -9V, -8V, -7V,-6V,-5V
16
VGS=-4V
12
8
VGS=-3V
4
0
012 345
-VDS, Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current
10000
1000
VGS=-2.5V
VGS=-3V
VGS=-4.5V
Normalized Brekdown Voltage vs Ambient
Temperature
1.4
1.2
1
0.8
0.6
-60
ID=-250μA,
VGS=0V
-20 20
60 100 140
Tj, Junction Temperature(°C)
180
Source Drain Current vs Source-Drain Voltage
1.2
VGS=0V
1
Tj=25°C
0.8
100
10
0.01
VGS=-10V
0.1 1 10
-ID, Drain Current(A)
100
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
240
ID=-5A
200
160
120
80
40
0
24 68
-VGS, Gate-Source Voltage(V)
10
0.6
Tj=150°C
0.4
0.2
0
4 8 12 16
-IS, Source Drain Current(A)
20
Normalized Drain-Source On-State Resistance vs
Junction Tempearture
1.8
1.6 VGS=-10V, ID=-5A
1.4
1.2
1
0.8
0.6
0.4 RDS(ON) @ Tj=25°C : 68.8mΩ
0.2
-60
-20 20
60 100 140
Tj, Junction Temperature(°C)
180
MTB90P06Q8
CYStek Product Specification
4페이지 Reel Dimension
CYStech Electronics Corp.
Spec. No. : C733Q8
Issued Date : 2011.03.30
Revised Date : 2012.03.01
Page No. : 7/9
Carrier Tape Dimension
MTB90P06Q8
CYStek Product Specification
7페이지 | |||
구 성 | 총 9 페이지수 | ||
다운로드 | [ MTB90P06Q8.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
MTB90P06Q8 | P-Channel Logic Level Enhancement Mode Power MOSFET | Cystech Electonics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |