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PDF MTD015P10E3 Data sheet ( Hoja de datos )
| Número de pieza | MTD015P10E3 | |
| Descripción | P-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | Cystech Electonics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MTD015P10E3 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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CYStech Electronics Corp.
Spec. No. : C159F3
Issued Date : 2016.11.02
Revised Date :
Page No. : 1/8
P-Channel Enhancement Mode Power MOSFET
MTD015P10E3
BVDSS
ID @ VGS=-10V, TC=25°C
ID @ VGS=-10V, TA=25°C
RDSON(TYP) @ VGS=-10V, ID=-20A
Features
• Simple Drive Requirement
• Repetitive Avalanche Rated
• Fast Switching Characteristic
• RoHS compliant package
RDSON(TYP) @ VGS=-4.5V, ID=-15A
-100V
-107A
-8.6A
11.6mΩ
13.7mΩ
Symbol
MTD015P10E3
Outline
TO-220
G：Gate
D：Drain
S：Source
GDS
Ordering Information
Device
Package
Shipping
MTD015P10E3-0-UB-X
TO-220
(Pb-free lead plating package)
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS
compliant and green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTD015P10E3
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C159F3
Issued Date : 2016.11.02
Revised Date :
Page No. : 5/8
Typical Characteristics(Cont.)
100000
Capacitance vs Drain-to-Source Voltage
10000
Ciss
Threshold Voltage vs Junction Tempearture
1.4
1.2
1 ID=-1mA
0.8
1000
100
0
C oss
Crss
5 10 15 20 25
-VDS, Drain-Source Voltage(V)
30
0.6
ID=-250μA
0.4
0.2
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
Gate Charge Characteristics
100 10
10
1
0.1
0.01
0.001
VDS=-10V
Pulsed
Ta=25°C
0.01 0.1
1
10
-ID, Drain Current(A)
100
8 VDS=-50V
6
4 VDS=-80V
2
ID=-90A
0
0 20 40 60 80 100 120 140 160 180 200
Total Gate Charge---Qg(nC)
1000
100
Maximum Safe Operating Area
RDS(ON)
Limited
10μs
100μs
1ms
10
1
TC=25°C, Tj=175°C, VGS=-10V,
RθJC=0.5°C/W single pulse
10ms
100ms
DC
0.1
0.1
1 10 100
-VDS, Drain-Source Voltage(V)
1000
Maximum Drain Current vs Case Temperature
120
Silicon Limit
100
80
Package Limit
60
40
20 VGS=-10V, RθJC=0.5°C/W
0
25 50 75 100 125 150
TC, Case Temperature(°C)
175
MTD015P10E3
CYStek Product Specification
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MTD015P10E3.PDF ] | |
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