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BD8306MUV 데이터시트 PDF




ROHM Semiconductor에서 제조한 전자 부품 BD8306MUV은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


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부품번호 BD8306MUV 기능
기능 Integrated 2.0A MOSFET 1ch Buck-Boost Converter
제조업체 ROHM Semiconductor
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BD8306MUV 데이터시트, 핀배열, 회로
Datasheet
1.8V to 5.5V, Integrated 2.0A MOSFET 1ch
Buck-Boost Converter
BD8306MUV
General Description
ROHM’s highly-efficient buck-boost converter
BD8306MUV produces buck-boost output voltage
including 3.3 V from two-cell or three-cell alkaline
battery, or one-cell lithium-ion battery with just one
inductor. This IC adopts the original buck-boost drive
system and creates a more efficient power supply than
the conventional SEPIC-system or H-bridge system
switching regulators.
Features
Highly-Efficient Buck-Boost DC/DC Converter
Constructed with just one Inductor.
Maximum output current changes depending on the
input and output voltages. Input current for PVCC
terminal should be less than 2.0A including the DC
current and ripple current of the inductor. Please
refer to Figure 25 and Figure 34 for details about
the maximum output current at 3.3V and 5.0V
output.
Incorporates a Soft-Start Function.
Incorporates a Timer Latch System with Short
Protection Function.
Application
General Portable Equipment
DSC
DVC
Cellular Phone
PDA
LED
Typical Application Circuit
2.8V to 5.5V, Output: 3.3V / 1.0 A, Frequency 1MHz
1100µuFF(c(ecrearmamic)ic)
mmuurartaata
GRM31CB11A106KA01
2.8V2t.o855.5.5VV
12 11
10
RRVVCCCC
0Ω
13
PVCC
14 VCC
Key Specifications
Input Voltage Range:
+1.8V to +5.5V
Output Voltage Range:
+1.8V to +5.2V
Output Current:
(at 3.3V Output, +2.8V to +5.5V Input) 1.0A
(at 5.0V Output, +2.8V to +5.5V Input) 0.7A
Pch FET ON-Resistance:
120m(Typ)
Nch FET ON-Resistance:
100m(Typ)
Standby Current:
0μA (Typ)
Operating Temperature Range:
-40°C to +85°C
Package
W (Typ) x D (Typ) x H (Max)
VQFN016V3030
3.00mm x 3.00mm x 1.00mm
9
8
PGND
LXL2x2 7
44..77uµHH
TOKO DE3518C
ON/OFF
15 STB
RRRRTT
3399kkΩΩ
16 RT
1
2
CCVVCCCC
1FuF
CCFBFB
2222000pFF
RRFBFB4.47.7kkΩΩ
LXL2x2 6
VOUT
5
34
101µ0FuF(c(ceerraammiicc))
mmuruaratata
GRM31CB11A106KA01
3.3V/1.0A
RRINNVV11
565k6ΩkΩ
RRININVV2 2
1100kkΩΩ
CCCC
1120ppFF
RRCC
44..77kkΩΩ
Product structureSilicon monolithic integrated circuit
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
TSZ2211114001
This product has no designed protection against radioactive rays
1/25
TSZ02201-0Q3Q0NZ00340-1-2
10.Aug.2016 Rev.003




BD8306MUV pdf, 반도체, 판매, 대치품
BD8306MUV
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Maximum Input Supply Voltage VCC,PVCC
-0.3 to +7
V
Maximum Input Current
IINMAX
2.0
A
Maximum Input Voltage
Power Dissipation (Note 1)
VLX1
VLX2
Pd
7.0 V
7.0 V
0.62 W
Storage Temperature
Tstg
-55 to +150
°C
Junction Temperature
Tjmax
+150
°C
(Note 1) When mounted on 74.2x74.2x1.6mm and operated over 25°C Pd reduces by 4.96mW/°C.
Caution: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit
between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over
the absolute maximum ratings.
Recommended Operating Conditions(Ta=25°C)
Parameter
Symbol
Rating
Unit
Min Typ Max
Power Supply Voltage Range
VCC
1.8
-
5.5 V
Output Voltage Range
VOUT
1.8
-
5.2 V
Operating Temperature Range
Topr
-40
-
+85 °C
www.rohm.com
©2014 ROHM Co., Ltd. All rights reserved.
TSZ2211115001
4/25
TSZ02201-0Q3Q0NZ00340-1-2
10.Aug.2016 Rev.003

4페이지










BD8306MUV 전자부품, 판매, 대치품
BD8306MUV
Typical Performance Curves - continued
1.0 1.0
0.8
TTaa==--2255ddeegg
0.6
0.8
0.6
Ta=-25deg
0.4 0.4
TTaa==2255ddeegg
Ta=25deg
0.2 0.2
TTaa==8855ddeegg
Ta=85de
g
0.0 0.0
1.5 1.6 1.7 1.8
Power SuppVlyCVCo[lVta]ge : VCC [V]
Figure 5. ErrorAmp Buffer Voltage vs Power Supply Voltage
(UVLO Detect Threshold)
1.5 1.6 1.7 1.8
Power SuppVlyCCVo[Vlt]age : VCC [V]
Figure 6. ErrorAmp Buffer Voltage vs Power Supply Voltage
(UVLO Reset Threshold)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0
0.5 1.0
VFVBF[BV[]V]
1.5
Figure 7. FB Sink Current vs VFB
(VINV=0.8V)
2.0
40
35
30
25
20
15
10
5
0
0.0
0.5 1.0 1.5
VFVBF[BV][V]
2.0
Figure 8. FB Source Current vs VFB
(VINV=0.2V)
www.rohm.com
©2014 ROHM Co., Ltd. All rights reserved.
TSZ2211115001
7/25
TSZ02201-0Q3Q0NZ00340-1-2
10.Aug.2016 Rev.003

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부품번호상세설명 및 기능제조사
BD8306MUV

Integrated 2.0A MOSFET 1ch Buck-Boost Converter

ROHM Semiconductor
ROHM Semiconductor

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