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부품번호 | CS3410BR 기능 |
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기능 | Silicon N-Channel Power MOSFET | ||
제조업체 | Huajing Microelectronics | ||
로고 | |||
Silicon N-Channel Power MOSFET
CS3410 BR
○R
General Description:
CS3410 BR, the silicon N-channel Enhanced VDMOSFETs,
is obtained by the self-aligned planar Technology which reduce the
conduction loss, improve switching performance and enhance the
avalanche energy. The transistor can be used in various power
switching circuit for system miniaturization and higher efficiency. The
package form is TO-262, which accords with the RoHS standard.
Features:
l Fast Switching
l Low ON Resistance(Rdson≤0.1Ω)
l Low Gate Charge (Typical Data:20nC)
l Low Reverse transfer capacitances(Typical:100PF)
l 100% Single Pulse avalanche energy Test
Applications:
Circuit of switching DC/DC converters and DC motor
control.
Absolute(Tc= 25℃ unless otherwise specified):
Symbol Parameter
VDSS
ID
IDMa1
VGS
EAS a2
EAR a1
IAR a1
dv/dt a3
PD
TJ,Tstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
VDSS
ID
PD (TC=25℃)
RDS(ON)Typ
100
17
80
0.075
V
A
W
Ω
Rating
100
17
12
68
±20
500
50
3.2
5
80
0.53
175,–55 to 175
300
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/℃
℃
℃
W U XI C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 1 of 10 2015V01
CS3410 BR
○R
Characteristics Curve:
100
10
DC
OPERATION IN THIS AREA
1 MAY BE LIMITED BY RDS(ON)
TJ=MAX RATED
TC=25℃ Single Pulse
100μs
1 ms
10μs
100
80
60
40
20
0.1
1 10 100
Vds , Drain-to-Source Voltage , Volts
Figure 1 Maximum Forward Bias Safe Operating Area
20
15
0
0 25 50 75 100 125 150 175
TC , Case Temperature , C
Figure 2 Maximum Power Dissipation vs Case Temperature
70
PULSE DURATION=250μs
60
DUTY FACTOR=0.5%MAX
Tc = 25℃
VGS=15V
VGS=10V
VGS=8V
50
40
10
30
20
5
10
0
0
Figure 3
25 50 75 100 125 150 175
Tc, Junction temperature ,C
Maximum Continuous Drain Current vs Case Temperature
10
0
0
VGS=7V
VGS=6V
VGS=5V
VGS=5.5V
VGS=4V
5 10 15 20 25
Vds , Drain-to-Source Voltage , Volts
Figure 4 Typical Output Characteristics
30
1
20%
5%
0.1
50%
10%
Single pulse
0.01
0.00001
2%
1%
PDM
t1
t2
NOTES:
DUTY FACTOR :D=t1/ t2
PEAK Tj=PDM*ZthJC*RthJC+TC
0.0001
0.001
0.01
0.1
Rectangular Pulse Duration,Seconds
Figure 5 Maximum Effective Thermal Impendance , Junction to Case
1
W U XI C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 4 of 10 2015V01
10
4페이지 Test Circuit and Waveform
CS3410 BR
○R
W U XI C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 7 of 10 2015V01
7페이지 | |||
구 성 | 총 10 페이지수 | ||
다운로드 | [ CS3410BR.PDF 데이터시트 ] |
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부품번호 | 상세설명 및 기능 | 제조사 |
CS3410B3 | Silicon N-Channel Power MOSFET | Huajing Microelectronics |
CS3410B4 | Silicon N-Channel Power MOSFET | Huajing Microelectronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |