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PDF CS3025A8 Data sheet ( Hoja de datos )

Número de pieza CS3025A8
Descripción 60V Silicon N-Channel Power MOSFET
Fabricantes citc 
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No Preview Available ! CS3025A8 Hoja de datos, Descripción, Manual

CS3025A8
60V Silicon N-Channel Power MOSFET
Features
Fast switching.
ESD improved capability.
Low gate charge.
Low reverse transfer capacitances.
100% single pulse avalanche energy test.
Mechanical data
Epoxy : UL94-V0 rated flame retardant.
Case : JEDEC TO-220AB molded plastic body.
Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026.
Polarity: As marked.
Mounting Position : Any.
Weight : Approximated 2.25 gram.
Outline
TO-220AB
0.409(10.50)
0.378(10.10)
0.189(4.80)
0.173(4.30)
0.114(1.40)
0.098(1.20)
0.638(16.0)
0.606(15.0)
00.1.11380(3(3.7.900) )
Marking code
Drain
0.551(14.70)
0.472(12.70)
GDS
0.056(1.37)
0.044(1.17)
0.102(3.0)
0.082(2.30)
Gate
Source
0.035(0.90)
0.028(0.70)
0.108(2.74)
0.092(2.34)
0.022(0.55)
0.014(0.35)
Dimensions in inches and (millimeters)
Absolute(TC = 25OC unless otherwise specified)
PARAMETER
Drain-Source Voltage
Continuous Drain Current(1)
Continuous Drain Current
Pulsed Drain Current(2)
Gate-Source Voltage
Single Pulse Avalanche Energy(3)
CONDITIONS
TC = 100OC
Power Dissipation
Peak Diode Recovery dv/dt(4)
Operating and Storage Temperature Range
Maximum temperature for soldering
Derating factor above 25OC
NOTE : 1.Drain Current limited by Maximum Package Current Rating, 75 Amps.
2.Repetitive rating; pulse width limited by maximum junction temperature.
3.L=260uH, ID = 101.5A, Start TJ = 25OC.
4.ISD =50A,di/dt 100A/us, VDDBVDS, Start TJ = 25OC.
Symbol
VDSS
ID
IDM
VGS
EAS
PD
dV/dt
TJ, TSTG
TL
CS3205A8
60
120
84
480
±20
1300
230
1.4
3
-55 ~ +175
300
UNIT
V
A
V
mJ
W
W/OC
V/ns
OC
OC
Document ID : DS-21M63
1 Revised Date : 2014/11/04
Revision : C

1 page




CS3025A8 pdf
Rating and characteristic curves
CS3025A8
60V Silicon N-Channel Power MOSFET
Document ID : DS-21M63
5 Revised Date : 2014/11/04
Revision : C

5 Page










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