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PDF CS150N04A8 Data sheet ( Hoja de datos )
| Número de pieza | CS150N04A8 | |
| Descripción | Silicon N-Channel Power MOSFET | |
| Fabricantes | Huajing Microelectronics | |
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Silicon N-Channel Power MOSFET
CS150N04 A8
○R
General Description：
CS150N04 A8, the silicon N-channel Enhanced
VDMOSFETs, is obtained by advanced trench Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220AB, which accords with the RoHS standard.
Features：
l Fast Switching
l Low ON Resistance(Rdson≤4.5mΩType4mΩ)
l High Power and Current Handing Capability
l Low Reverse transfer Capacitances(Typical:480pF)
l 100% Single Pulse avalanche energy Test
Applications：
UPS,Inverter,Lighting.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
Drain-to-Source Voltage
ID
IDMa1
VGS
EAS a2
dv/dt a3
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
PD
TJ，Tstg
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
TL MaximumTemperature for Soldering
Symbol
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient
VDSS
ID
PD (TC=25℃)
RDS(ON)Typ
Rating
40
150
90
600
±30
100
15
150
1.2
–55 to 150
300
Typ.
0.83
100
40 V
150 A
100 W
4 mΩ
Units
V
A
A
A
V
mJ
V/ns
W
W/℃
℃
℃
Units
℃/W
℃/W
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 1 of 7 2 015V01
1 page  
CS150N04 A8
○R
Drain-to-Source breakdown VS Case Temperature
55
Drain-to-Source On-Resistance VS Case Temperature
7
50
45
Note：
1. Vgs = 10V
2. Id= 250uA
40
25 50 75 100 125 150
TJ,Junction Temperature [℃]
Drain-to-Source On-Resistance VS Gate to Source Voltage
40
Tj = 150 ℃
30
Tj = 25℃
20
No te ：
1. VDD = 5V
2. 250us Pul s e Test
10
0
2468
VGS,Gate-to-Source Voltage [V]
10
10
6
5
4
Note：
1. Vgs = 10V
2. Id= 2.5A
3
25 50 75 100 125 150
TJ,Junction Temperature [℃ ]
Maximun Forward Bias Safe Operating Area
1000
100μs
100
1ms
DC 10ms
10
1
0.1
0.1
Single Pulse
Tc=25℃
TJ=150℃
Operation in This Area
is Limited by RDS(on)
1 10
VDS,Drain-to-Source Voltage,V
100
1
0.1
0.01
Duty Cycle - Descending Order
0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
RθJC = 1 ℃ /w
0.001
1.E-05
1.E-04
1.E-03
1.E-02
Rectangular Pulse Duration [sec]
Maximum Effective Thermal Impendance , Junction to Case
1.E-01
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 5 of 7 2 015V01
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet CS150N04A8.PDF ] | |
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