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부품번호 | CS6N60FA9H 기능 |
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기능 | Silicon N-Channel Power MOSFET | ||
제조업체 | Huajing Microelectronics | ||
로고 | |||
Silicon N-Channel Power MOSFET
CS6N60F A9H
○R
General Description:
CS6N60F A9H, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220F, which accords with the RoHS standard.
Features:
l Fast Switching
l Low ON Resistance(Rdson≤1.7Ω)
l Low Gate Charge (Typical Data: 19.5nC)
l Low Reverse transfer capacitances(Typical: 7.5pF)
l 100% Single Pulse avalanche energy Test
Applications:
Power switch circuit of adaptor and charger.
Absolute(Tc= 25℃ unless otherwise specified):
Symbol Parameter
VDSS
ID
IDMa1
VGS
EAS a2
EAR a1
IAR a1
dv/dt a3
PD
TJ,Tstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
VDSS
ID
PD(TC=25℃)
RDS(ON)Typ
600
6
34
1.4
Rating
600
6
3.6
24
±30
270
31
2.5
5
34
0.27
150,–55 to 150
300
V
A
W
Ω
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/℃
℃
℃
W U XI C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 1 of 10 2015V01
Characteristics Curve:
100
CS6N60F A9H
40
○R
10
1
OPERATION IN THIS AREA
MAY BE LIMITED BY RDS(ON)
0 .1 TJ=MAX RATED
TC=25℃ Single Pulse
100μs
1ms
10ms
30
20
10
DC
0 .0 1
1
Figure
6
10 100 1000
V ds , D rain-to-S ource V oltage , V olts
1 Maximum Forward Bias Safe Operating Area
5
4
3
2
1
0
0
Figure
25 50 75 100 125 150
TC, Case Temperature , C
2 Maximum Power Dissipation vs Case Temperature
6
PULSE DURATION=10μs
DUTY FACTOR=0.5%MAX
Tc = 25℃
VGS=15V
4.5
VGS=7V
3
VGS=6V
VGS=6.5V
1.5
VGS=4.5V
VGS=5.5V
0
0
25 50
75 100 125 150
TC , Case Temperature , C
Figure 3 Maximum Continuous Drain Current vs Case Temperature
1
50%
0
0
5 10 15 20
Vds , Drain-to-Source Voltage , Volts
Figure 4 Typical Output Characteristics
20%
0.1 10%
5%
0.01
Single pulse
0.001
0.00001
2%
1%
PDM
t1
t2
NOTES:
DUTY FACTOR :D=t1/ t2
PEAK Tj=PDM*ZthJC*RthJC+TC
0.0001
0.001
0.01
Rectangular Pulse Duration,Seconds
Figure 5 Maximum Effective Thermal Impendance , Junction to Case
0.1
W U XI C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 4 of 10 2015V01
25
1
4페이지 Test Circuit and Waveform
CS6N60F A9H
○R
W U XI C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 7 of 10 2015V01
7페이지 | |||
구 성 | 총 10 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
CS6N60FA9H | Silicon N-Channel Power MOSFET | Huajing Microelectronics |
CS6N60FA9H-G | Silicon N-Channel Power MOSFET | Huajing Microelectronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |