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Número de pieza | CS740A0H | |
Descripción | Silicon N-Channel Power MOSFET | |
Fabricantes | Huajing Microelectronics | |
Logotipo | ||
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No Preview Available ! Silicon N-Channel Power MOSFET
CS740 A0H
○R
General Description:
CS740 A0H, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-263, which accords with the RoHS standard.
Features:
l Fast Switching
l Low ON Resistance(Rdson≤0.50Ω)
l Low Gate Charge (Typical Data:28nC)
l Low Reverse transfer capacitances(Typical:21pF)
l 100% Single Pulse avalanche energy Test
Applications:
Power switch circuit of adaptor and charger.
Absolute(Tc= 25℃ unless otherwise specified):
Symbol Parameter
VDSS
ID
IDMa1
VGS
EAS a2
EAR a1
IAR a1
dv/dt a3
PD
TJ,Tstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
VDSS
ID
PD (TC=25℃)
RDS(ON)Typ
400
10
120
0.36
Rating
400
10
7
40
±30
650
66
3.6
5
120
0.96
150,–55 to 150
300
V
A
W
Ω
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/℃
℃
℃
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pa g e 1 of 10 201 5V01
1 page CS740 A0H
○R
100
10
TRANSCONDUCTANCE MAY LIMIT
CURRENT IN THIS REGION
FOR TEMPERATURES
ABOVE 25℃ DERATE PEAK
CURRENT AS FOLLOWS:
I = I 25
150 − TC
125
VGS=10V
1
1.00E-05
1.00E-04
1.00E-03
1.00E-02
1.00E-01
t Pulse Width , Seconds
1.00E+00
1.00E+01
Figure 6 Maximum Peak Current Capability
16 1.8
PULSE DURATION = 10μs
DUTY FACTOR = 0.5%MAX
1.5 Tc =25 ℃
ID= 11A
12
VDS=25V
1.2
ID= 5.5A
ID= 2.75A
8 0.9
0.6
4
0.3
0
02468
Vgs,Gate to source Voltage,Volts
Figure 7 Typical Transfer Characteristics
10..62
0
10 4 6 8 10 12
Vgs , Gate to Source Voltage,Volts
Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage
and Drain Current
2.5
0.15
VGS=10V
0.48
2 VGS=10V
ID=5.5A
1.5
0.36 1
00..24 0.5
00..12
0
Figure
2468
Id , Drain Current(A)
9 Typical Drain to Source ON Resistance
vs Drain Current
10
0
-100
-50
Figure
0 50 100 150 200
Tj,Junction Temperature.C
10 Typical Drian to Source on Resistance
vs Junction Temperature
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 5 of 10 201 5V01
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet CS740A0H.PDF ] |
Número de pieza | Descripción | Fabricantes |
CS740A0H | Silicon N-Channel Power MOSFET | Huajing Microelectronics |
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